Specific Process Knowledge: Difference between revisions
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!Materials | !Materials | ||
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|rowspan="5" valign="top"|[[Specific Process Knowledge/Doping|Doping]] | |rowspan="5" valign="top"| [[Specific Process Knowledge/Doping|Doping]] | ||
|Ion implant | |Ion implant | ||
|? | |? | ||
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!Materials | !Materials | ||
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|[[Specific Process Knowledge/Thermal Process|Thermal Process]] | |rowspan="5" valign="top"|[[Specific Process Knowledge/Thermal Process|Thermal Process]] | ||
|Annealing (>350C) | |Annealing (>350C) | ||
|Si, PECVD layers, Al, BCB curing, Polymer | |Si, PECVD layers, Al, BCB curing, Polymer | ||
|- | |- | ||
|Oxidation | |Oxidation | ||
|Si wafers | |Si wafers | ||
|- | |- | ||
|Doping with B/P | |Doping with B/P | ||
|Si wafers | |Si wafers | ||
|- | |- | ||
|Pyrolysis | |Pyrolysis | ||
|Resists: AZ, SU8, PDMS | |Resists: AZ, SU8, PDMS | ||
|- | |- | ||
|Rapid Thermal Anneal (RTP) | |Rapid Thermal Anneal (RTP) | ||
|SiO2, Si3N4, Ti, III-V | |SiO2, Si3N4, Ti, III-V | ||