Specific Process Knowledge: Difference between revisions

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!Materials
!Materials
|-
|-
|rowspan="5" valign="top"|[[Specific Process Knowledge/Doping|Doping]]
|rowspan="5" valign="top"| [[Specific Process Knowledge/Doping|Doping]]
|Ion implant
|Ion implant
|?
|?
Line 488: Line 488:
!Materials
!Materials
|-
|-
|[[Specific Process Knowledge/Thermal Process|Thermal Process]]
|rowspan="5" valign="top"|[[Specific Process Knowledge/Thermal Process|Thermal Process]]
|Annealing (>350C)
|Annealing (>350C)
|Si, PECVD layers, Al, BCB curing, Polymer
|Si, PECVD layers, Al, BCB curing, Polymer
|-
|-
|
|Oxidation
|Oxidation
|Si wafers
|Si wafers
|-
|-
|
|Doping with B/P
|Doping with B/P
|Si wafers
|Si wafers
|-
|-
|
|Pyrolysis
|Pyrolysis
|Resists: AZ, SU8, PDMS
|Resists: AZ, SU8, PDMS
|-
|-
|
|Rapid Thermal Anneal (RTP)
|Rapid Thermal Anneal (RTP)
|SiO2, Si3N4, Ti, III-V
|SiO2, Si3N4, Ti, III-V

Revision as of 16:54, 10 November 2014

2nd Level - Process Topic

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Choose the process topic you are interested in

The section below here is under construction

Overview of sample processing

Clean your sample Dry your sample Create a thin film on your sample Dope your sample
Thermal treatment of your sample Make a mask on your sample Transfer pattern to your sample Define your structure directly
Bond your samples together Characterize your sample Pack your sample  



jmli test