Specific Process Knowledge/Lithography: Difference between revisions
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*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#BHF|BHF]] | *[[Specific Process Knowledge/Lithography/Pretreatment#BHF|BHF]] | ||
*[[ | *[[Specific_Process_Knowledge/Lithography/Pretreatment#Oven_250C|Oven 250C]] | ||
===[[Specific Process Knowledge/Lithography/Coaters|Coaters]]=== | ===[[Specific Process Knowledge/Lithography/Coaters|Coaters]]=== | ||
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==[[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]== | ==[[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]== | ||
*[[Specific Process Knowledge/Lithography/DUVStepper#SÜSS Spinner-Stepper|SÜSS Spinner-Stepper]] | *[[Specific Process Knowledge/Lithography/DUVStepper#SÜSS Spinner-Stepper|SÜSS Spinner-Stepper]] | ||
Revision as of 09:06, 4 November 2014

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Direct writing via electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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