Specific Process Knowledge/Lithography: Difference between revisions
Appearance
| Line 149: | Line 149: | ||
<br clear="all" /> | <br clear="all" /> | ||
== [[/Making Mask design|Making Mask design]] == | |||
*[[/Making Mask design#Tips_and_tricks_for_mask_designing|Tips and tricks for mask designing]] | |||
*[[/Making Mask design#Alignment_marks|Alignment marks]] | |||
*[[/Making Mask design#How_to_order_a_mask|How to order a mask]] | |||
=Equipment Pages= | =Equipment Pages= | ||
Revision as of 10:10, 4 October 2013

Feedback to this page: click here
Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography |
2-Photon Polymerization Lithography | |
|---|---|---|---|---|---|
| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Pattern transfer via electron beam | ||
| Pattern size range |
|
|
|
|
|
| Resist type |
|
|
|
|
|
| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
|
|
We have cassettes that fit to
Only one cassette can be loaded at time |
|
|
| Allowed materials |
|
|
|
|
|