Jump to content

Specific Process Knowledge/Lithography: Difference between revisions

From LabAdviser
Tigre (talk | contribs)
Tigre (talk | contribs)
Line 23: Line 23:
|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!width="10%"|
![[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
![[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]
![[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]]
![[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]]
![[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]]


|-
|-
Line 37: Line 37:
|Generel description - method 1
|Generel description - method 1
|Generel description - method 2
|Generel description - method 2
|The JEOL JBX-9500 electron beam lithography system is designed for writing patterns with dimensions from nanometers to sub-micrometers. The minimum electron beam spot size is around 12 nm, the maximum writing-field without stitching is 1 mm x 1 mm.
|
*Patterning structures between 12 nm - 1 µm
*Maximum writing-field without stitching is 1 mm x 1 mm.
|4
|4
|5
|5

Revision as of 11:13, 9 August 2013

THIS PAGE IS UNDER CONSTRUCTION

Feedback to this page: click here

Available lithography methods at Danchip

There are a broad varity of lithography methods at Danchip. The methods are compared here to make it easier for you to compare and choose the one that suits your needs.

Comparing lithography methods at Danchip

UV Lithography DUV Stepper Lithography E-beam Lithography Nano Imprint Lithography 2-Photon Polymerization Lithography
Generel description Generel description - method 1 Generel description - method 2
  • Patterning structures between 12 nm - 1 µm
  • Maximum writing-field without stitching is 1 mm x 1 mm.
4 5
Pattern size range
  • ~1µm and up
  • ~200nm and up
  • ~10nm and up
  • ~20nm and up
  • 3D: 0.3 µm spot; 1.3 µm high
Resist type
  • UV sensitive:
    • AZ
    • SU-8
  • DUV sensitive
    • KSF M230Y
    • KSF M35G
  • E-beam sensitive
    • ZEP502A (positive)
    • HSQ (negative)
    • SU-8
  • Imprint polymers:
    • ??
  • UV cross-linking:
    • IP photoresists
    • SU-8
Resist thickness range
  • ~0.5µm to 20µm?
  • ~50nm to 2µm?
  • ~30nm to 0.5 µm
  • ~20nm to 10µm?
  • ?nm - ?µm
Typical exposure time

2s-30s pr. wafer

?-? pr. ?

Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I

? pr. wafer

? pr. µm2

Substrate size
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers

We have cassettes that fit to

  • 4 small samples (20mm, 12mm, 8mm, 4mm)
  • 6 wafers of 50 mm in size
  • 2 wafers of 100 mm in size
  • 1 wafer of 150 mm in size

Only one cassette can be loaded at time

  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • Cover slides
  • 50 mm wafers
  • 100 mm wafers
  • IBIDI
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Si, SiO2, III-V materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3


Equipment Pages

UV Lithography

Pretreatment

Coaters

UV Exposure

Baking

Development

Strip

Lift-off

Wafer Cleaning

DUV Stepper Lithography

E-Beam Lithography

NanoImprint Lithography

3D Lithography