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Specific Process Knowledge/Lithography: Difference between revisions

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![[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
![[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]
![[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]]
![[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]]
![[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]]
!width="16%"| [[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]]


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|Generel description - method 1
|Generel description - method 1
|Generel description - method 2
|Generel description - method 2
|The JEOL JBX-9500 electron beam lithography system is designed for writing patterns with dimensions from nanometers to sub-micrometers. The minimum electron beam spot size is around 12 nm, the maximum writing-field without stitching is 1 mm x 1 mm.
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*Patterning structures between 12 nm - 1 µm
*Maximum writing-field without stitching is 1 mm x 1 mm.
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