Specific Process Knowledge/Lithography/Strip: Difference between revisions
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'''Typical stripping parameters''' | '''Typical stripping parameters''' | ||
* | *Tested with resist: 1.5 µm AZ 5214E | ||
* | *Tested with substrate: 100 mm Si | ||
*O<sub>2</sub>: 100 sccm | *O<sub>2</sub>: 100 sccm | ||
*N<sub>2</sub>: 100 sccm | *N<sub>2</sub>: 100 sccm | ||
*Pressure (DSC): 1.3 mbar | *Pressure (DSC): 1.3 mbar | ||
*Power: 1000 W | *Power: 1000 W | ||
*Time (single wafer): 20 minutes | *Time (single wafer): 20-30 minutes | ||
*Time (full boat): 90 minutes | *Time (full boat): 90 minutes | ||