Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

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 [[image:PECVD3a.jpg|300x300px|right|thumb|PECVD3 - positioned in cleanroom A-1]]
 [[image:PECVD4.JPG|300x300px|right|thumb|PECVD4 - positioned in cleanroom B-1]]
-We have two PECVD's here at DTU Nanolab. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.
+We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.
 PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive species. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.