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*[[Specific Process Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
*[[Specific Process Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
*[[Specific Process Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]]
*[[Specific Process Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]]
*[[Specific Process Knowledge/Lithography/DUVStepper#SÜSS Spinner-Stepper|SÜSS Spinner-Stepper]]
*[[Specific Process Knowledge/Lithography/Coaters#Manual Spinner (Polymers)|Manual Spinner (Polymers)]]
*[[Specific Process Knowledge/Lithography/Coaters#Manual Spinner (Polymers)|Manual Spinner (Polymers)]]
*[[Specific Process Knowledge/Lithography/Coaters#Manual Spinner 1 (Laurell)|Manual Spinner 1 (Laurell)]]
*[[Specific Process Knowledge/Lithography/Coaters#Manual Spinner 1 (Laurell)|Manual Spinner 1 (Laurell)]]
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==[[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]==
==[[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]==
*[[Specific Process Knowledge/Lithography/DUVStepper#SÜSS Spinner-Stepper|SÜSS Spinner-Stepper]]
 
*[[Specific Process Knowledge/Lithography/DUVStepper#DUV Stepper FPA-3000EX4 from Canon|DUV Stepper FPA-3000EX4 from Canon]]
*[[Specific Process Knowledge/Lithography/DUVStepper#DUV Stepper FPA-3000EX4 from Canon|DUV Stepper FPA-3000EX4 from Canon]]
**[[Specific Process Knowledge/Lithography/DUVStepper#Overview of performance|Overview of performance]]
**[[Specific Process Knowledge/Lithography/DUVStepper#Overview of performance|Overview of performance]]


==[[Specific Process Knowledge/Lithography/EBeamLithography|E-Beam Lithography]]==
==[[Specific Process Knowledge/Lithography/EBeamLithography|E-Beam Lithography]]==
*[[Specific Process Knowledge/Lithography/EBeamLithography#Performance of the e-beam writer|Performance]]
*[[Specific Process Knowledge/Lithography/EBeamLithography|E-beam writer]]
*[[Specific Process Knowledge/Lithography/EBeamLithography#Getting started|Getting started]]
 
*[[Specific Process Knowledge/Lithography/EBeamLithography#E-beam resists and Process Flows|E-beam resists and Process Flows]]
*[[Specific Process Knowledge/Lithography/EBeamLithography#Proximity Error Correction|Proximity Error Correction]]
*[[Specific Process Knowledge/Lithography/EBeamLithography#Charging of non-conductive substrates|Charging of non-conductive substrates]]


==[[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]==
==[[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]==
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<br><br>
<br><br>
= Manuals =
= Manuals =
*[[Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual|User Manual for JEOL JBX-9500 E-beam Writer]]
*[[Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual|User Manual for JEOL JBX-9500 E-beam Writer]]

Revision as of 11:26, 28 January 2016


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Comparing lithography methods at DTU Danchip

UV Lithography DUV Stepper Lithography E-beam Lithography Nano Imprint Lithography 2-Photon Polymerization Lithography
Generel description Pattern transfer via UltraViolet (UV) light Pattern transfer via DeepUltraViolet (DUV) light Direct writing via electron beam Pattern transfer via hot embossing(HE) Direct writing via IR laser
Pattern size range
  • ~1.25 µm and up
  • ~200 nm and up
  • ~12 nm - 1 µm
  • ~20 nm and up
  • 3D voxel through transparent substrate: 0.3 µm diameter; 0.6 µm high
  • 2D spot on opaque substrate: 0.6 µm diameter
Resist type
  • UV sensitive:
    • AZ 5214E, AZ 4562, AZ MiR 701 (positive)
    • AZ 5214E, AZ nLOF 2020, SU-8 (negative)
  • DUV sensitive
    • JSR KRF M230Y, JSR KRF M35G (positive)
    • UVN2300-0.8 (negative)
  • E-beam sensitive
    • ZEP502A, CSAR , PMMA (positive)
    • HSQ, Ma-N 2403, AR-N 7520 (negative)
  • Imprint polymers:
    • Topas
    • PMMA
  • UV sensitive:
    • IP photoresists, SU-8 (3D)
    • AZ resists (2D)
Resist thickness range

~0.5µm to 20µm

~50nm to 2µm

~30nm to 0.5 µm

~ 100nm to 2µm

droplet or coating

Typical exposure time

2s-30s pr. wafer

Process depended, depends on pattern, pattern area and dose

Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I

Process depended, depends also on heating and cooling temperature rates

Process depended, depends on pattern and dose

Substrate size
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers

We have cassettes that fit to

  • 4 small samples (20mm, 12mm, 8mm, 4mm)
  • 6 wafers of 50 mm in size
  • 2 wafers of 100 mm in size
  • 1 wafer of 150 mm in size

Only one cassette can be loaded at time

  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • Cover slides
  • 50 mm wafers
  • 100 mm wafers
  • IBIDI
Allowed materials
  • Any standard cleanroom material
  • Any standard cleanroom material
  • Any standard cleanroom material
  • Any standard cleanroom material
  • Any standard cleanroom material



Equipment Pages

UV Lithography

Pretreatment

Coaters

UV Exposure


Baking

Development

Strip

Lift-off


DUV Stepper Lithography

E-Beam Lithography


NanoImprint Lithography

3D Lithography



Manuals