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| = Process Pages =
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| ===[[Specific_Process_Knowledge/Lithography/UVLithography|UV Lithography]]===
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| *[[Specific_Process_Knowledge/III-V_Process/photolithography/III_V_Photoresist|Spin Coating of AZ5214E, AZ5206, and LOR7B/AZ5206]]
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| ===[[Specific Process Knowledge/Lithography/DUVStepperLithography|Deep UV Lithography]]===
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| *[[Specific Process Knowledge/Lithography/DUVStepper#Process information|Spin Coater]]
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| *[[Specific Process Knowledge/Lithography/DUVStepper#Process information 2|Stepper]]
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| ===[[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]]===
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| *[[Specific_Process_Knowledge/Lithography/CSAR|Spin curves, dose tests, and etch tests in standard positive resist AR-P 6200 (AllResist)]]
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| *[[Specific_Process_Knowledge/Lithography/mrEBL6000| Spin curves and dose tests in mr EBL 6000.1 negative e-beam resist (MircoResist)]]
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| *[[Specific_Process_Knowledge/Lithography/ZEP520A|Spin curves of ZEP520A (ZEON)]]
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| *[[Specific_Process_Knowledge/Lithography/ARP617|Spin curves of Copolymer AR-P 617.05 (AllResist)]]
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| *[[Specific_Process_Knowledge/Lithography/Espacer|Process information on Espacer]]
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| ===[[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]===
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| *[[Specific_Process_Knowledge/Imprinting|Imprinting]]
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| =Equipment Pages= | | =Equipment Pages= |
Feedback to this page: click here
Comparing lithography methods at DTU Danchip
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UV Lithography
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DUV Stepper Lithography
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E-beam Lithography
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Nano Imprint Lithography
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2-Photon Polymerization Lithography 
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| Generel description
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Pattern transfer via UltraViolet (UV) light
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Pattern transfer via DeepUltraViolet (DUV) light
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Direct writing via electron beam
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Pattern transfer via hot embossing(HE)
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Direct writing via IR laser
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| Pattern size range
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- 3D voxel through transparent substrate: 0.3 µm diameter; 0.6 µm high
- 2D spot on opaque substrate: 0.6 µm diameter
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| Resist type
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- UV sensitive:
- AZ 5214E, AZ 4562, AZ MiR 701 (positive)
- AZ 5214E, AZ nLOF 2020, SU-8 (negative)
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- DUV sensitive
- JSR KRF M230Y, JSR KRF M35G (positive)
- UVN2300-0.8 (negative)
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- E-beam sensitive
- ZEP502A, CSAR , PMMA (positive)
- HSQ, Ma-N 2403, AR-N 7520 (negative)
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- UV sensitive:
- IP photoresists, SU-8 (3D)
- AZ resists (2D)
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| Resist thickness range
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~0.5µm to 20µm
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~50nm to 2µm
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~30nm to 0.5 µm
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~ 100nm to 2µm
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droplet or coating
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| Typical exposure time
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2s-30s pr. wafer
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Process depended, depends on pattern, pattern area and dose
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Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I
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Process depended, depends also on heating and cooling temperature rates
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Process depended, depends on pattern and dose
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| Substrate size
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- small samples
- 50 mm wafers
- 100 mm wafers
- 150 mm wafers
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- 100 mm wafers
- 150 mm wafers
- 200 mm wafers
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We have cassettes that fit to
- 4 small samples (20mm, 12mm, 8mm, 4mm)
- 6 wafers of 50 mm in size
- 2 wafers of 100 mm in size
- 1 wafer of 150 mm in size
Only one cassette can be loaded at time
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- small samples
- 50 mm wafers
- 100 mm wafers
- 150 mm wafers
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- Cover slides
- 50 mm wafers
- 100 mm wafers
- IBIDI
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| Allowed materials
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- Any standard cleanroom material
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- Any standard cleanroom material
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- Any standard cleanroom material
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- Any standard cleanroom material
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- Any standard cleanroom material
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Equipment Pages
Manuals
