Specific Process Knowledge/Lithography: Difference between revisions
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In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. | In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. | ||
This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout. | This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout. | ||
[[/Mask Design|Mask Design]] | Please read more details here: [[/Mask Design|Mask Design]] | ||
=Comparing lithography methods at DTU Danchip= | =Comparing lithography methods at DTU Danchip= | ||
Revision as of 15:48, 27 November 2013
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Mask Design
In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.
Please read more details here: Mask Design
Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography 
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2-Photon Polymerization Lithography
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Pattern transfer via electron beam | Pattern transfer via hot embossing(HE) | Pattern transfer via direct writing |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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