Specific Process Knowledge/Lithography: Difference between revisions
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*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#BHF|BHF]] | *[[Specific Process Knowledge/Lithography/Pretreatment#BHF|BHF]] | ||
*[[Specific Process Knowledge/Lithography/Pretreatment# | *[[Specific Process Knowledge/Lithography/Pretreatment#250C_oven_for_pretreatment|250C Oven for Pretreatment]] | ||
===[[Specific Process Knowledge/Lithography/Coaters|Coaters]]=== | ===[[Specific Process Knowledge/Lithography/Coaters|Coaters]]=== | ||
Revision as of 09:16, 22 October 2013

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography |
2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Pattern transfer via electron beam | ||
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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