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Specific Process Knowledge/Lithography: Difference between revisions

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!Resist thickness range
!Resist thickness range
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*~0.5µm to 20µm
~0.5µm to 20µm
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*~50nm to 2µm
~50nm to 2µm
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*~30nm to 0.5 µm
~30nm to 0.5 µm
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*~ 100nm to 2µm
~ 100nm to 2µm
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*droplet
droplet
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2s-30s pr. wafer
2s-30s pr. wafer
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?-? pr. ?
Process depended, depends on pattern, pattern area and dose
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Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]:    t = Q*A/I
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]:    t = Q*A/I
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? pr. wafer
Process depended, depends also on heating and cooling temperature rates
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? pr. µm2
Process depended, depends on pattern and dose
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*Si, SiO2, SOI, quartz, pyrex, III-V materials
*Si, SiO2, SOI, quartz, pyrex, III-V materials
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*Allowed material 1
*Si, SiO2, SOI, quartz, pyrex, III-V materials
*Allowed material 2
*Allowed material 3
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*Si, SiO2, SOI, quartz, pyrex, III-V materials
*Si, SiO2, SOI, quartz, pyrex, III-V materials
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*Allowed material 1
*Si, SiO2, SOI, quartz, pyrex, III-V materials
*Allowed material 2
*Allowed material 3
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*Allowed material 1
*Si, SiO2, SOI, quartz, pyrex, III-V materials
*Allowed material 2
*Allowed material 3
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Revision as of 16:31, 24 September 2013


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Comparing lithography methods at DTU Danchip

UV Lithography DUV Stepper Lithography E-beam Lithography Nano Imprint Lithography 2-Photon Polymerization Lithography
Generel description Pattern transfer via UltraViolet (UV) light Pattern transfer via DeepUltraViolet (DUV) light Pattern transfer via electron beam
Pattern size range
  • ~1µm and up
  • ~200nm and up
  • ~12nm - 1 µm
  • ~20nm and up
  • 3D: 0.3 µm spot; 1.3 µm high
Resist type
  • UV sensitive:
    • AZ5214E, AZ4562
    • AZ MiR 701, AZ nLOF 2020
    • SU-8
  • DUV sensitive
    • KSF M230Y
    • KSF M35G
  • E-beam sensitive
    • ZEP502A, CSAR, PMMA (positive)
    • HSQ, Ma-N 2403, AR-N 7520 (negative)
  • Imprint polymers:
    • Topas
    • PMMA
  • UV cross-linking:
    • IP photoresists
    • SU-8
Resist thickness range

~0.5µm to 20µm

~50nm to 2µm

~30nm to 0.5 µm

~ 100nm to 2µm

droplet

Typical exposure time

2s-30s pr. wafer

Process depended, depends on pattern, pattern area and dose

Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I

Process depended, depends also on heating and cooling temperature rates

Process depended, depends on pattern and dose

Substrate size
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers

We have cassettes that fit to

  • 4 small samples (20mm, 12mm, 8mm, 4mm)
  • 6 wafers of 50 mm in size
  • 2 wafers of 100 mm in size
  • 1 wafer of 150 mm in size

Only one cassette can be loaded at time

  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • Cover slides
  • 50 mm wafers
  • 100 mm wafers
  • IBIDI
Allowed materials
  • Si, SiO2, SOI, quartz, pyrex, III-V materials
  • Si, SiO2, SOI, quartz, pyrex, III-V materials
  • Si, SiO2, SOI, quartz, pyrex, III-V materials
  • Si, SiO2, SOI, quartz, pyrex, III-V materials
  • Si, SiO2, SOI, quartz, pyrex, III-V materials


Equipment Pages

UV Lithography

Pretreatment

Coaters

UV Exposure

Baking

Development

Strip

Lift-off

Wafer Cleaning

DUV Stepper Lithography

E-Beam Lithography

NanoImprint Lithography

3D Lithography