Specific Process Knowledge/Lithography: Difference between revisions
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!Resist thickness range | !Resist thickness range | ||
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~0.5µm to 20µm | |||
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~50nm to 2µm | |||
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~30nm to 0.5 µm | |||
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~ 100nm to 2µm | |||
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droplet | |||
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2s-30s pr. wafer | 2s-30s pr. wafer | ||
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Process depended, depends on pattern, pattern area and dose | |||
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Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I | Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I | ||
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Process depended, depends also on heating and cooling temperature rates | |||
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Process depended, depends on pattern and dose | |||
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*Si, SiO2, SOI, quartz, pyrex, III-V materials | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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* | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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*Si, SiO2, SOI, quartz, pyrex, III-V materials | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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* | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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* | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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Revision as of 16:31, 24 September 2013

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography |
E-beam Lithography | Nano Imprint Lithography |
2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Pattern transfer via electron beam | ||
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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