Specific Process Knowledge/Lithography: Difference between revisions
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*Imprint polymers: | *Imprint polymers: | ||
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**PMMA | |||
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*UV cross-linking: | *UV cross-linking: | ||
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*~0.5µm to 20µm | *~0.5µm to 20µm | ||
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*~50nm to 2µm | *~50nm to 2µm | ||
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*~30nm to 0.5 µm | *~30nm to 0.5 µm | ||
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*~ | *~ 100nm to 2µm | ||
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* | *droplet | ||
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Revision as of 16:14, 24 September 2013

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography |
E-beam Lithography | Nano Imprint Lithography |
2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Pattern transfer via electron beam | ||
| Pattern size range |
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| Resist type |
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| Resist thickness range |
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| Typical exposure time |
2s-30s pr. wafer |
?-? pr. ? |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
? pr. wafer |
? pr. µm2 |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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