Revision as of 14:01, 14 August 2013

Feedback to this page: click here

Comparing lithography methods at DTU Danchip

	UV Lithography	DUV Stepper Lithography	E-beam Lithography	Nano Imprint Lithography	2-Photon Polymerization Lithography
Generel description	Generel description - method 1	Generel description - method 2	Electron beam lithography	4	5
Pattern size range	~1µm and up	~200nm and up	~12nm - 1 µm	~20nm and up	3D: 0.3 µm spot; 1.3 µm high
Resist type	UV sensitive: AZ SU-8	DUV sensitive KSF M230Y KSF M35G	E-beam sensitive ZEP502A, CSAR, PMMA (positive) HSQ, Ma-N 2403, AR-N 7520 (negative)	Imprint polymers: ??	UV cross-linking: IP photoresists SU-8
Resist thickness range	~0.5µm to 20µm?	~50nm to 2µm?	~30nm to 0.5 µm	~20nm to 10µm?	?nm - ?µm
Typical exposure time	2s-30s pr. wafer	?-? pr. ?	Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I	? pr. wafer	? pr. µm2
Substrate size	small samples 50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers 200 mm wafers	We have cassettes that fit to 4 small samples (20mm, 12mm, 8mm, 4mm) 6 wafers of 50 mm in size 2 wafers of 100 mm in size 1 wafer of 150 mm in size Only one cassette can be loaded at time	small samples 50 mm wafers 100 mm wafers 150 mm wafers	Cover slides 50 mm wafers 100 mm wafers IBIDI
Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3	Si, SiO2, SOI, quartz, pyrex, III-V materials	Allowed material 1 Allowed material 2 Allowed material 3	Allowed material 1 Allowed material 2 Allowed material 3

@@ Line 161: / Line 161: @@
 |-
-| style="width: 30%"|
+| style="width: 50%"|
 {| style="color: black;" width="100%"