Specific Process Knowledge/Lithography: Difference between revisions
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*[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]] | *[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]] | ||
*[[Specific Process Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]] | *[[Specific Process Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]] | ||
*[[Specific Process Knowledge/Lithography/Strip#Rough Acetone | *[[Specific Process Knowledge/Lithography/Strip#Rough Acetone Strip|Rough Acetone Strip]] | ||
*[[Specific Process Knowledge/Lithography/Strip#Fine Acetone | *[[Specific Process Knowledge/Lithography/Strip#Fine Acetone Strip|Fine Acetone Strip]] | ||
===[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]=== | ===[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]=== | ||
Revision as of 15:07, 9 August 2013

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Generel description - method 1 | Generel description - method 2 | Electron beam lithography | 4 | 5 |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
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| Typical exposure time |
2s-30s pr. wafer |
?-? pr. ? |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
? pr. wafer |
? pr. µm2 |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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