Specific Process Knowledge/Lithography: Difference between revisions
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==[[Specific Process Knowledge/Lithography/EBeamLithography|E-Beam Lithography]]== | ==[[Specific Process Knowledge/Lithography/EBeamLithography|E-Beam Lithography]]== | ||
*[[Specific Process Knowledge/Lithography/EBeamLithography# | *[[Specific Process Knowledge/Lithography/EBeamLithography#Performance of the e-beam writer|Performance]] | ||
*[[Specific Process Knowledge/Lithography/EBeamLithography# | *[[Specific Process Knowledge/Lithography/EBeamLithography#Getting started|Getting started]] | ||
*[[Specific Process Knowledge/Lithography/EBeamLithography# | *[[Specific Process Knowledge/Lithography/EBeamLithography#E-beam resists and proces flows|E-beam resists and proces flows]] | ||
*[[Specific Process Knowledge/Lithography/EBeamLithography#Proximity Error Corrections|Proximity Error Corrections]] | |||
*[[Specific Process Knowledge/Lithography/EBeamLithography#Charging of non-conductive substrates|Charging of non-conductive substrates]] | |||
==[[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]== | ==[[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]== | ||
Revision as of 12:09, 9 August 2013

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Generel description - method 1 | Generel description - method 2 | Electron beam lithography | 4 | 5 |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
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| Typical exposure time |
2s-30s pr. wafer |
?-? pr. ? |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
? pr. wafer |
? pr. µm2 |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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