Specific Process Knowledge/Lithography: Difference between revisions
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|Generel description - method 1 | |Generel description - method 1 | ||
|Generel description - method 2 | |Generel description - method 2 | ||
| | |The JEOL JBX-9500 electron beam lithography system is designed for writing patterns with dimensions from nanometers to sub-micrometers. The minimum electron beam spot size is around 12 nm, the maximum writing-field without stitching is 1 mm x 1 mm. | ||
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?-? pr. ? | ?-? pr. ? | ||
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Depends on dose | Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I | ||
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? pr. wafer | ? pr. wafer | ||
Revision as of 09:20, 2 August 2013
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Available lithography methods at Danchip
There are a broad varity of lithography methods at Danchip. The methods are compared here to make it easier for you to compare and choose the one that suits your needs.
Comparing lithography methods at Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Generel description - method 1 | Generel description - method 2 | The JEOL JBX-9500 electron beam lithography system is designed for writing patterns with dimensions from nanometers to sub-micrometers. The minimum electron beam spot size is around 12 nm, the maximum writing-field without stitching is 1 mm x 1 mm. | 4 | 5 |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
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| Typical exposure time |
2s-30s pr. wafer |
?-? pr. ? |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
? pr. wafer |
? pr. µm2 |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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