Specific Process Knowledge/Lithography: Difference between revisions

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 |Generel description - method 1
 |Generel description - method 2
-|3
+|The JEOL JBX-9500 electron beam lithography system is designed for writing patterns with dimensions from nanometers to sub-micrometers. The minimum electron beam spot size is around 12 nm, the maximum writing-field without stitching is 1 mm x 1 mm.
 |4
 |5
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 ?-? pr. ?
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-Depends on dose (in units of muC/cm2), estimate exposure time on sheet 2 of e-beam logbook
+Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I
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 ? pr. wafer