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Specific Process Knowledge/Lithography/Strip: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,716 edits
 
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Process parameter !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4&5)]] !! Surface treatment !! Other ashing of organic material
! !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|-
|-
! scope=row style="text-align: left;" | Process pressure
! scope=row style="text-align: left;" | Process pressure
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 150 sccm || 200 sccm
| 150 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 55°C  
| 43°C || 55°C  
|}
|}
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| Tested parameter || Tested parameter  
| Tested parameter || Tested parameter  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar || 1.3 mbar
| 1.3 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C  
| 43°C || 47°C  
|}
|}
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows temperature
| Ashing rate follows Power
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W 
| Tested parameter
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| Tested parameter
| 40°C
|}
|}


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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows power
| Ashing rate follows temperature
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| Tested parameter
| 1000 W
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 40°C
| Tested parameter
|}
|}


Line 533: Line 533:
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
|-
! scope=row| Process  
! scope=row style="text-align: left;" | Process  
| Wet resist strip || Metal lift-off process
| Wet resist strip || Metal lift-off process
|-
|-
! scope=row| Chemical
! scope=row style="text-align: left;" | Chemical
| Remover 1165 (NMP) || Remover 1165 (NMP)
| Remover 1165 (NMP) || Remover 1165 (NMP)
|-
|-
! scope=row| Process temperature
! scope=row style="text-align: left;" | Process temperature
| Up to 65°C || Up to 65°C
| Up to 65°C || Up to 65°C
|-
|-
! scope=row| Substrate batch
! scope=row style="text-align: left;" | Substrate batch
| 1-25 wafers || 1-25 wafers
| 1-25 wafers || 1-25 wafers
|-
|-
! scope=row| Substrate size
! scope=row style="text-align: left;" | Substrate size
|  
|  
*100 mm wafers
*100 mm wafers
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*150 mm wafers
*150 mm wafers
|-
|-
! scope=row| Materials allowed
! scope=row style="text-align: left;" | Materials allowed
|  
|  
*Silicon
*Silicon
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