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Line 18: Line 18:
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
! scope=row| Purpose  
! scope=row style="text-align: left;" | Purpose  
| Resist descum
| Resist descum
|
|
Line 29: Line 29:
| Metal lift-off
| Metal lift-off
|-
|-
! scope=row| Method
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
| Plasma ashing
Line 36: Line 36:
| Solvent & ultrasonication
| Solvent & ultrasonication
|-
|-
! scope=row| Process: Gasses
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
| O<sub>2</sub> (50 sccm)
|
|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
*<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
Line 48: Line 48:
| NA
| NA
|-
|-
! scope=row| Process: Power
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
Line 55: Line 55:
| NA
| NA
|-
|-
! scope=row| Process: Solvent
! scope=row style="text-align: left;" | Process solvent
| NA
| NA
| NA
| NA
Line 66: Line 66:
*IPA (rinsing agent)
*IPA (rinsing agent)
|-
|-
! scope=row| Substrate: Batch
! scope=row style="text-align: left;" | Substrate batch
|
|
*Chips: several
*Chips: several
Line 90: Line 90:
*150 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
! scope=row| Substrate: Materials
! scope=row style="text-align: left;" | Substrate materials
|
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*<span style="color:red">'''No polymer substrates'''</span><br>
Line 125: Line 125:
*Films, or patterned films, of any material except type IV (Pb, Te)
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


= Plasma Ashing process parameters=
= Plasma Ashing process parameters=


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{| class="wikitable"
|-
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
|-
! scope=row style="text-align: left;" | Tool
| Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
|-
|-
 
! scope=row style="text-align: left;" | Process pressure
|-style="background:silver; color:black"
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|
! Photoresist stripping
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
 
|-style="background:whitesmoke; color:black"
!Process pressure
|1.3 mbar
|1.3 mbar  
|0.5-1.5 mbar  
|0.5-1.5 mbar
|-
|-
 
! scope=row style="text-align: left;" | Process gasses
|-style="background:silver; color:black"
|  
!Process gases
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
|
|O<sub>2</sub>
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
|-
 
! scope=row style="text-align: left;" | Process power
|-style="background:whitesmoke; color:black"
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
!Process power
|1000 W
|200 W
|150-1000 W
|1000 W or less for heat- sensitive materials
|-
 
|-style="background:silver; color:black"
!Process  time
|5-90 minutes
|1-30 minutes
|seconds to minutes
|Between 0.5 and 20 hours, depending on the material
|-
|-
 
! scope=row style="text-align: left;" | Process time
|-style="background:whitesmoke; color:black"
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
!Batch size
|1-25
|1-25
|1 wafer at a time
|1 wafer at a time, use a container, e.g Petri dish
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
|}
|}


<br clear="all" />
<br clear="all" />


<!--
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min


Typical process parameters:  
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W


{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}


A typical descum process in plasma asher 1 or 2:
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min


{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}


Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
=Decommisioned tools=
 
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
-->
 
=Plasma Asher 1=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


=Plasma Asher 2=
 
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen is used for processing.
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100%<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
Other materials have not been tested.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
<br clear="all" />
<br clear="all" />
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
<br clear="all" />
-->
=Plasma Asher 4=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
*No metals allowed
*No metal oxides allowed
*No III-V materials allowed
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
<br clear="all" />
=Plasma Asher 5=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
The Plasma Asher 5 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for:
*Etching of glass and ceramic
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
<br clear="all" />
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
<br clear="all" />
==Overview of wet bench 06 and 07==
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-style="background:silver; color:black"
|
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
|-style="background:whitesmoke; color:black"
!General description'''
|Wet stripping of resist
|Lift-off process
|-
|-style="background:silver; color:black"
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-style="background:whitesmoke; color:black"
!Process temperature
|Up to 65°C
|Up to 65°C
|-
|-style="background:silver; color:black"
!Batch size
|
1 - 25 wafers
|
1 - 25 wafers
|-
|-style="background:whitesmoke; color:black"
!Size of substrate
|
*100 mm wafers
*150 mm wafers
|
*100 mm wafers
*150 mm wafers
|-
|-style="background:silver; color:black"
!Allowed materials
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
All metals except Type IV (Pb, Te)
|-
|}

Latest revision as of 14:57, 18 February 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Resist stripping
  • Resist descum
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)


Plasma Ashing process parameters

Resist stripping Descum Descum Surface treatment Other ashing of organic material
Tool Plasma asher 4 & 5 Plasma asher 3: Descum Plasma asher 4 & 5 Plasma asher 4 & 5 Plasma asher 4 & 5
Process pressure 1.3 mbar 0.8 mbar 1.3 mbar 0.5-1.5 mbar 0.5-1.5 mbar
Process gasses
  • O2 (100 sccm)
  • N2 (100 sccm)
  • O2 (45 sccm)
  • O2 (100 sccm)
  • N2 (100 sccm)
  • O2
  • N2
  • CF4
  • O2
Process power 1000 W 100 W 200 W 150-1000 W 150-1000 W
Process time 20-90 minutes 1-10 minutes 5-15 minutes Seconds to minutes Many hours, material dependent
Substrate batch 1-25 1-2 1-25 1-25 1-25


Plasma Asher 3: Descum

Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.

Product name: Diener Pico Plasma Asher
Year of purchase: 2014

The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.

In this machine, only Oxygen is used for processing.

Typical process parameters:
Process: Photoresist descumming
Pressure: 0.2-0.8 mbar
Gas: 45 sccm O2
Power: 100 W (100%)
Time: 1 -10 minutes (depending on photoresist type and thickness)

Other materials have not been tested.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

Detailed information about descum processing on Plasma asher 3: Descum can be found here.

Plasma Asher 4

Plasma asher 4 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 4 can be used for the following processes:

  • Photoresist stripping
  • Descumming
  • Surface cleaning
  • Removal of organic passivation layers and masks


Plasma asher 4 has the following material restrictions:

  • No metals allowed
  • No metal oxides allowed
  • No III-V materials allowed

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.

  • O2: 100 sccm
  • N2: 100 sccm
  • Pressure (DSC): 1.3 mbar
  • Power: 1000 W
  • Time (single wafer): 20-30 minutes
  • Time (full boat): 90 minutes


Process development notes

Information about process development for plasma asher 04 and plasma asher 05 can be found here.

Plasma Asher 5

Plasma asher 5 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 5 can be used for the following processes:

  • Photoresist stripping
  • Descumming
  • Surface cleaning
  • Removal of organic passivation layers and masks


Furthermore plasma processing using CF4 in plasma asher 5 can be used for:

  • Etching of glass and ceramic
  • Etching of SiO2, Si3N4, Si
  • Removal of polyimide layers


Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Process Information

Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 here.


Processes specifically only for plasma asher 5:


Resist Strip

Resist strip bench in D-3

This resist strip is only for wafers without metal and SU-8.

There are one Remover 1165 bath for stripping and one IPA bath for rinsing.

Here are the main rules for resist strip use:

  • Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
  • After the strip rinse your wafers in the IPA bath for 2-3 min.
  • Rinse your wafers for 4-5 min. in running water after stripping.


The user manual and contact information can be found in LabManager: Resist Strip - requires login

Overview of wet bench 06 and 07

Resist Strip Lift-off
Process Wet resist strip Metal lift-off process
Chemical Remover 1165 (NMP) Remover 1165 (NMP)
Process temperature Up to 65°C Up to 65°C
Substrate batch 1-25 wafers 1-25 wafers
Substrate size
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Materials allowed
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
 All metals except Type IV (Pb, Te)


Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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