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Line 18: Line 18:
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
! scope=row| Purpose  
! scope=row style="text-align: left;" | Purpose  
| Resist descum
| Resist descum
|
|
Line 29: Line 29:
| Metal lift-off
| Metal lift-off
|-
|-
! scope=row| Method
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
| Plasma ashing
Line 36: Line 36:
| Solvent & ultrasonication
| Solvent & ultrasonication
|-
|-
! scope=row| Process: Gasses
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
| O<sub>2</sub> (50 sccm)
|
|
Line 48: Line 48:
| NA
| NA
|-
|-
! scope=row| Process: Power
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
Line 55: Line 55:
| NA
| NA
|-
|-
! scope=row| Process: Solvent
! scope=row style="text-align: left;" | Process solvent
| NA
| NA
| NA
| NA
Line 66: Line 66:
*IPA (rinsing agent)
*IPA (rinsing agent)
|-
|-
! scope=row| Substrate: Batch
! scope=row style="text-align: left;" | Substrate batch
|
|
*Chips: several
*Chips: several
Line 90: Line 90:
*150 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
! scope=row| Substrate: Materials
! scope=row style="text-align: left;" | Substrate materials
|
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*<span style="color:red">'''No polymer substrates'''</span><br>
Line 130: Line 130:
= Plasma Ashing process parameters=
= Plasma Ashing process parameters=


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{| class="wikitable"
|-
|-
 
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|-style="background:silver; color:black"
|-
|
! scope=row style="text-align: left;" | Process pressure
! Photoresist stripping
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-  
 
|-style="background:whitesmoke; color:black"
!Process pressure
|1.3 mbar
|1.3 mbar  
|0.5-1.5 mbar  
|0.5-1.5 mbar
|-
|-
 
! scope=row style="text-align: left;" | Process gasses
|-style="background:silver; color:black"
|  
!Process gases
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
|
|O<sub>2</sub>
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
|-
! scope=row style="text-align: left;" | Process power
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|-
! scope=row style="text-align: left;" | Process time
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1 || 1
|}
<br clear="all" />


|-style="background:whitesmoke; color:black"
=Plasma Asher 1=
!Process power
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
|1000 W
 
|200 W
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
|150-1000 W
<br clear="all" />
|1000 W or less for heat- sensitive materials
 
|-
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
 
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|400px|thumb|Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.]]
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014
 
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
 
In this machine, only Oxygen is used for processing.
 
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100 W (100%)<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
 
Other materials have not been tested.


|-style="background:silver; color:black"
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
!Process  time
|5-90 minutes
|1-30 minutes
|seconds to minutes
|Between 0.5 and 20 hours, depending on the material
|-


|-style="background:whitesmoke; color:black"
===Process Information===
!Batch size
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
|1-25
|1-25
|1 wafer at a time
|1 wafer at a time, use a container, e.g Petri dish
|-
|}


<br clear="all" />
<br clear="all" />


<!--
=Plasma Asher 4=
Typical process time for stripping in plasma asher 1 or 2:
[[File:PA5 front.jpg|400px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
*1.5 µm AZ 5214E resist film: ~15 min
Product name: PVA Tepla Gigabatch 380M<br>
*10 µm AZ 4562 resist film: ~45 min
Year of purchase: 2024


Typical process parameters:  
The Plasma Asher 4 can be used for the following processes:
*O<sub>2</sub>: 400 ml/min
*Photoresist stripping
*N<sub>2</sub>: 70 ml/min
*Descumming
*Power: 1000 W
*Surface cleaning
*Removal of organic passivation layers and masks




A typical descum process in plasma asher 1 or 2:
Plasma asher 4 has the following material restrictions:
*O<sub>2</sub>: 70 ml/min
*No metals allowed
*N<sub>2</sub>: 70 ml/min
*No metal oxides allowed
*Power: 150 W
*No III-V materials allowed
*Time : 10 min


The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''


Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
'''Typical stripping parameters'''<br>
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20-30 minutes
*Time (full boat): 90 minutes


'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
<br clear="all" />
-->


==Process gas ratio for plasma asher 4 & 5==
==Process gas ratio for plasma asher 4 & 5==
[[File:PA_gas_mix_v3.png|upright=2.0|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers. The green area (~50% N<sub>2</sub>) covers the optimum range for both situations.|right]]
[[File:PA_gas_mix_v3.png|400px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers. The green area (~50% N<sub>2</sub>) covers the optimum range for both situations.|right]]
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.  
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.  


Line 219: Line 240:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 500 sccm || 200 sccm
| 500 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.25 mbar || 1.3 mbar
| 1.25 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C  
| 43°C || 47°C  
|}
|}
Line 265: Line 286:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 150 sccm || 200 sccm
| 150 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 55°C  
| 43°C || 55°C  
|}
|}
Line 304: Line 325:


==Process gas flow rate for plasma asher 4 & 5==
==Process gas flow rate for plasma asher 4 & 5==
[[File:PA_flowRate_v4.png|480px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers. The green area covers the optimum range (~200 sccm) for both situations.|right]]
[[File:PA_flowRate_v4.png|400px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers. The green area covers the optimum range (~200 sccm) for both situations.|right]]
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. The experiments indicate that the gas flow rate has only a minor impact on the ashing rate.
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. The experiments indicate that the gas flow rate has only a minor impact on the ashing rate.


Line 311: Line 332:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| Tested parameter || Tested parameter  
| Tested parameter || Tested parameter  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar || 1.3 mbar
| 1.3 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C  
| 43°C || 47°C  
|}
|}
Line 350: Line 371:


==Process power for plasma asher 4 & 5==
==Process power for plasma asher 4 & 5==
[[File:PA_power_v3.png|480px|thumb|Ashing rate as function of microwave power.|right]]
[[File:PA_power_v3.png|400px|thumb|Ashing rate as function of microwave power.|right]]
The ashing rate is related to the power used during processing. Higher power increases ashing rate.
The ashing rate is related to the power used during processing. Higher power increases ashing rate.


{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows temperature
| Ashing rate follows Power
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W 
| Tested parameter
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| Tested parameter
| 40°C
|}
|}


Line 394: Line 415:


==Process temperature for plasma asher 4 & 5==
==Process temperature for plasma asher 4 & 5==
[[File:PA_temperature_v2.png|480px|thumb|Ashing rate as function of temperature.|right]]
[[File:PA_temperature_v2.png|400px|thumb|Ashing rate as function of temperature.|right]]
The ashing rate is related to the temperature during processing. Higher temperature increases ashing rate.
The ashing rate is related to the temperature during processing. Higher temperature increases ashing rate.


{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows power
| Ashing rate follows temperature
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| Tested parameter
| 1000 W
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 40°C
| Tested parameter
|}
|}


Line 438: Line 459:


==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5==
==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5==
[[File:PA_comparison_v2.png|480px|thumb|Comparison of ashing rate with different sibstrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]]
[[File:PA_comparison_v3.png|400px|thumb|Comparison of ashing rate with different substrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]]
The ashing rate is slightly higher for 100 mm substrates, but there is no difference between a 150 mm wafer and a 200 mm wafer.  
The ashing rate is highest for 100 mm substrates, lower for 150 mm substrates and even lower for 200 mm substrates.  


All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. The total gas flow has only little influence on the ashing rate, but slightly favors the lower flow rate of 200 sccm, similar to previous experiment results.
All substrate sizes follows the same pattern:
*Ashing rate increases with a higher percentage nitrogen in the gas mix
*Ashing rate increases with a higher chamber pressure
*The total gas flow has only little influence on the ashing rate, but <i>slightly</i> favors the lower flow rate of 200 sccm, similar to previous experiment results


<br clear="all" />
<br clear="all" />


'''Process parameter impact on ashing rate'''<br>
'''Process parameter impact on ashing rate'''<br>
Looking at ashing rate, using linear regression models on the process parameters, indicates that the gas mix and the chamber pressure has a significant impact on the ashing rate, while the gas flow has only little effect:
Investigating the ashing rate using linear regression models on the process parameters, indicates that the gas mix and the chamber pressure has a significant impact on the ashing rate, while the gas flow has only little effect:
<gallery mode="packed-hover" heights="150">
<gallery mode="packed-hover" heights="150">
ParamEffect_100_mm_v1.png|100 mm process parameter impact
ParamEffect_100_mm_v1.png|100 mm parameter impact
ParamEffect_150_mm_v1.png|150 mm process parameter impact
ParamEffect_150_mm_v1.png|150 mm parameter impact
ParamEffect_200_mm_v1.png|200 mm process parameter impact
ParamEffect_200_mm_v1.png|200 mm parameter impact
</gallery>
</gallery>
<br clear="all" />
=Plasma Asher 1=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen is used for processing.
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100%<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
Other materials have not been tested.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
<br clear="all" />
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
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=Plasma Asher 4=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
*No metals allowed
*No metal oxides allowed
*No III-V materials allowed
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 4|Descum using plasma asher 4]]
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]


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=Plasma Asher 5=
=Plasma Asher 5=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
[[File:PA5 front.jpg|400px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
Year of purchase: 2024
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*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers
*Removal of polyimide layers
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes




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===Process Information===
===Process Information===
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 5]]
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|here]].
 
 
'''Processes specifically only for plasma asher 5:'''<br>
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]


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=Resist Strip=
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
[[Image:Resist_strip.jpg|400px|thumb|Resist strip bench in D-3]]


This resist strip is only for wafers without metal and SU-8.
This resist strip is only for wafers without metal and SU-8.
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==Overview of wet bench 06 and 07==
==Overview of wet bench 06 and 07==
 
{| class="wikitable"
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|-
 
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]] !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-style="background:silver; color:black"
|-
|
! scope=row style="text-align: left;" | Process
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  
| Wet resist strip || Metal lift-off process
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-  
 
|-style="background:whitesmoke; color:black"
!General description'''
|Wet stripping of resist
|Lift-off process
|-
|-
 
! scope=row style="text-align: left;" | Chemical
|-style="background:silver; color:black"
| Remover 1165 (NMP) || Remover 1165 (NMP)
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-
 
! scope=row style="text-align: left;" | Process temperature
|-style="background:whitesmoke; color:black"
| Up to 65°C || Up to 65°C
!Process temperature
|Up to 65°C
|Up to 65°C
|-
|-
 
! scope=row style="text-align: left;" | Substrate batch
|-style="background:silver; color:black"
| 1-25 wafers || 1-25 wafers
!Batch size
|
1 - 25 wafers
|
1 - 25 wafers
|-
|-
 
! scope=row style="text-align: left;" | Substrate size
|-style="background:whitesmoke; color:black"
|  
!Size of substrate
|
*100 mm wafers
*100 mm wafers
*150 mm wafers
*150 mm wafers
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*150 mm wafers
*150 mm wafers
|-
|-
 
! scope=row style="text-align: left;" | Materials allowed
|-style="background:silver; color:black"
|  
!Allowed materials
|
*Silicon
*Silicon
*Silicon Oxide
*Silicon oxide
*Silicon Nitride
*Silicon nitride
*Silicon Oxynitride
*Silicon oxynitride
|
| All metals except Type IV (Pb, Te)
All metals except Type IV (Pb, Te)
|-
|}
|}
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