Specific Process Knowledge/Lithography/Coaters: Difference between revisions

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=Coater Comparison Table=
{{cc-nanolab}}
 
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Coaters click here]'''


[[Category: Equipment |Lithography coaters]]
[[Category: Equipment|Lithography coaters]]
[[Category: Lithography|Coaters]]
[[Category: Lithography|Coaters]]
[[Category: Thin Film Deposition|Coaters]]


__TOC__
=Coater Comparison Table=


{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper|Spin Coater: Süss Stepper]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin Coater: Gamma E-beam and UV|Spin Coater: Gamma E-beam and UV]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin Coater: Gamma E-beam and UV|Spin Coater: Gamma E-beam and UV]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|Spin Coater: LabSpin 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Labspin|Spin Coater: LabSpin 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|Spin Coater: LabSpin 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Labspin|Spin Coater: LabSpin 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|Spin Coater: Manual All Purpose]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spray Coater|Spray Coater]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters/SprayCoater|Spray Coater]]</b>
|-
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose  
!style="background:silver; width:100px; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
Line 27: Line 31:
**AZ 5214E
**AZ 5214E
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*In-line substrate HMDS priming
*Coating and baking of
*Coating and baking of  
**BARC (DUV42S-6)
**AZ MiR 701 (29cps)
**KRF M230Y
**AZ nLOF 2020
**KRF M35G
*Post-exposure baking at 110°C
**UVN2300-0.8
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*In-line substrate HMDS priming
*In-line substrate HMDS priming
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**AZ MiR 701 (29cps)
**AZ MiR 701 (29cps)
**AZ 4562
**AZ 4562
*Edge bead removal on novolac-based resist
*Edge bead removal on novolac-based resist and SU-8
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Coating of
*Coating of
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** CSAR, ZEP, PMMA/MMA, HSQ(FOx)
** CSAR, ZEP, PMMA/MMA, HSQ(FOx)
*Coating of UV resists
*Coating of UV resists
**AZ5214E, AZ4562, AZMiR701, AZnLOF
**AZ5214E, AZ4562, AZMiR701, AZnLOF, SU-8
*Coating of imprint resists
*Coating of imprint resists
|style="background:WhiteSmoke; color:black"|
* Coating of
** ESPACER
** Experimental resists
* Coating on
** Experimental substrates
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spraying imprint resist
*Spraying imprint resist
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*Spraying of other solutions
*Spraying of other solutions
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Substrate handling
|style="background:LightGrey; color:black"|Substrate handling
Line 73: Line 72:
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette
* Cassette-to-cassette
* Vacuum handling
* Vacuum handling and detection
* Vacuum spin chuck
* Vacuum spin chuck
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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* 4" edge handling chuck
* 4" edge handling chuck
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Single substrate
Can handle almost any sample size and shape
* Vacuum chuck
|style="background:WhiteSmoke; color:black"|
* Can handle almost any sample size and shape
|-
|-
|style="background:LightGrey; color:black"|Permanent media
|style="background:LightGrey; color:black"|Permanent media
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Line 100: Line 97:
* PGMEA solvent for backside rinse and spinner bowl cleaning
* PGMEA solvent for backside rinse and spinner bowl cleaning
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ MiR 701 (29cps) resist
* DUV42S-6 (BARC)
* AZ nLOF 2020 resist
* KRF M230Y resist
* PGMEA for backside rinse and edge-bead removal
* KRF M35G resist
* PGMEA for spinner bowl cleaning and vapor tip bath
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.0? (CSAR) for 2", 4", and 6"
* AR-P 6200.09 (CSAR) for 2", 4", and 6"
* AZ5214E for 2", 4", and 6"
* AZ5214E for 2", 4", and 6"
* AZ MiR 701 (29cps) for 4", and 6"
* AZ MiR 701 (29cps) for 4", and 6"
Line 111: Line 107:
* PGMEA solvent for edge bead removal, backside rinse, and spinner bowl cleaning
* PGMEA solvent for edge bead removal, backside rinse, and spinner bowl cleaning
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* No permanent media
No permanent media
|colspan="2" rowspan="2" align="center" style="background:WhiteSmoke; color:black"|Only manual dispense
|colspan="2" style="background:WhiteSmoke; color:black"|Only manual dispense
|colspan="1" rowspan="2" align="center" style="background:WhiteSmoke; color:black"|Only manual dispense
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* No permanent media
No permanent media
|-


|-
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* no manual dispense
* no manual dispense
* syringe dispense (60cc) of PGMEA and anisole-based resist
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* no manual dispense
* no manual dispense
* syringe dispense (30cc) of PGMEA and anisole-based resist
* syringe dispense (30cc) of PGMEA and anisole-based resist (2" only)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* yes
* yes
* pneumatic dispense for SU-8 resist and EBR solvent
* pneumatic dispense for SU-8 resist and EBR solvent
|colspan="2" style="background:WhiteSmoke; color:black"|Only manual dispense
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Two syringe pumps
Two syringe pumps
|-


|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Spindle speed
|style="background:LightGrey; color:black"|Spindle speed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*10 - 6000 rpm
10 - 6000 rpm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*10 - 9990 rpm
10 - 6000 rpm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*10 - 6000 rpm
10 - 6000 rpm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*10 - 5000 rpm (3000 rpm with non-vacuum chuck)
10 - 5000 rpm (3000 rpm with non-vacuum chuck)
|colspan="2" style="background:WhiteSmoke; color:black"|
|colspan="2" style="background:WhiteSmoke; color:black"|
*100 - 5000 rpm (3000 rpm with edge handling chuck)
100 - 5000 rpm (3000 rpm with edge handling chuck)
|style="background:WhiteSmoke; color:black"|
*100 - 7000 rpm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|-
|-
|style="background:LightGrey; color:black"|Gyrset
|style="background:LightGrey; color:black"|Gyrset
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*no
no
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*no
no
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*no
no
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*optional (max. speed 3000 rpm)
optional (max. speed 3000 rpm)
|colspan="2" style="background:WhiteSmoke; color:black"|
|colspan="2" style="background:WhiteSmoke; color:black"|
*no
no
|style="background:WhiteSmoke; color:black"|
*no
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate  size
|style="background:LightGrey; color:black"|Substrate  size
Line 174: Line 169:
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*100 mm wafers
*100 mm wafers
*150 mm wafers (tool change required)
*150 mm wafers
*200 mm wafers (may require tool change)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*2" or 50 mm wafers
*2" or 50 mm wafers
Line 188: Line 184:
*small pieces down to 10x10 mm2
*small pieces down to 10x10 mm2
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*50 mm wafers
Any sample(s) that fit inside machine
*100 mm wafers
*150 mm wafer
*small pieces down to 3x3 mm2
|style="background:WhiteSmoke; color:black"|
*Any sample(s) that fit inside machine
|-
|-
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 - 25
1 - 25
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 - 25
1 - 25
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 - 25
1 - 25
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1
1
|colspan="2" style="background:WhiteSmoke; color:black"|
|colspan="2" style="background:WhiteSmoke; color:black"|
*1
1
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1
1
|style="background:WhiteSmoke; color:black"|
*1
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon  
*Silicon  
*Glass
*Glass
'''No resist or crystalbond allowed in the HMDS module'''
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon  
*Silicon  
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*III-V materials
*III-V materials
*Glass
*Glass
'''No resist or crystalbond allowed in the HMDS module'''
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except III-V materials
All cleanroom materials except III-V materials
|colspan="2" style="background:WhiteSmoke; color:black"|
|colspan="2" style="background:WhiteSmoke; color:black"|
*Silicon  
*Silicon  
*III-V materials
*III-V materials
*Glass
*Glass
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All chemicals to be spray coated must be approved specifically for spray coating
*All chemicals to be spray coated must be approved specifically for spray coating
Line 239: Line 232:


=Spin coating=
=Spin coating=
The process of spin coating consists of a selection of the following steps:
The typical spin coating process consists of the following steps:
*Priming (typically HMDS)
#Priming (typically HMDS)
*Acceleration to a low spin speed if dynamic dispense is used
#Resist dispense (static or dynamic)
*Resist dispense (static or dynamic)
#*Optional: Acceleration to a low spin speed if dynamic dispense is used
*Resist spreading at low spin speed
#*Optional: Resist spreading at low spin speed
*Spin-off
#Spin-off
*Backside rinse (typically during spin-off)
#Backside rinse (typically during spin-off)
*Edge-bead removal
#Optional: Edge-bead removal
*Softbake (contact or proximity)
#Softbake (contact or proximity)
 


After priming, the wafer is is transferred to the spin coater. If static dispense is used, the wafer remains static during the resist dispense. In the case of dynamic dispense, the wafer rotates at low spin speed during the dispense. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.


After priming, the wafer is centered on the coater chuck and held in place by vacuum, or in some cases pins. If static dispense is used, the wafer remains static during the ensuing resist dispense. In the case of dynamic dispense, the wafer rotates at low spin speed during the dispense. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.
==Spin-off==
The spin-off cycle determines the thickness of the resist coating. For a given resist, the thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law:


===Spin-off===
<math>y = k \sdot x^{-a}</math>
The spin-off cycle determines the thickness of the resist coating. For a given resist, the thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law (y=k*x^-a). The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.


The coated thickness, t, as a function of the spin-off speed, w, follows an inverse power-law, t = k * w<sup>-a</sup>. The constant, k, is a function of the resist viscosity and solid content, and the spin-off time. The exponent, a, is dependent on solvent evaporation, and is typically ~½ for UV resists. This means that from the thickness t<sub>1</sub> achieved at spin speed w<sub>1</sub>, one can estimate the spin speed w<sub>2</sub> needed to achieve thickness t<sub>2</sub> using the relation: <br> t<sub>1</sub>*w<sub>1</sub><sup>½</sup> = t<sub>2</sub>*w<sub>2</sub><sup>½</sup> => w<sub>2</sub> = w<sub>1</sub> * t<sub>1</sub><sup>2</sup>/t<sub>2</sub><sup>2</sup>. <br> For thick SU-8, however, a is observed to be ~1 (probably due to the low solvent content and/or the formation of skin). In this case, the relation simply becomes: <br> t<sub>1</sub>*w<sub>1</sub> = t<sub>2</sub>*w<sub>2</sub> => w<sub>2</sub> = w<sub>1</sub> * t<sub>1</sub>/t<sub>2</sub>. <br>
The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.


===Backside rinse===
The coated thickness, <math>t</math>, as a function of the spin-off speed, <math>w</math>, follows an inverse power-law:
Dependent on the spin speeds used in the various steps of the spin coating, resist may creep over the edge of the wafer and onto the backside. Also, some resists tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy". This resist will contaminate the softbake hotplate, and thus subsequent wafers with resist. In a backside rinse step, solvent administered through a nozzle to the backside of the wafer while spinning at low or medium spin speed dissolves the resist and washes it away. After the rinse, a short spin at medium spin speed dries the wafer before the softbake. During the backside rinse solvent inevitably creeps onto the front side of the wafer. This effect may be used to dissolve and subsequently remove an edge-bead, but it may also leave the rim of the wafer exposed. As an alternative to backside rinse, a wafer which is left dirty on the backside by the spin coat process may be softbaked in proximity in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.


===Edge bead===
<math>t=k \sdot w^{-a}</math>
During spin coating, resist builds up at the edge of the wafer due to the change in surface tension at the edge. This phenomenon is called an edge-bead. Dependent on spin coating parameters, the coating may be several times thicker at the edge than in the central area. In a subsequent hard contact exposure step, this edge-bead induces an undesired proximity gap which reduces the lateral resolution, and may even cause the wafer to stick to the mask.


In an edge-bead removal step, solvent administered through a nozzle positioned at the edge of the wafer while spinning at low or medium spin speed dissolves the resist and washes it away. After the removal, a short spin at medium spin speed dries the wafer before the softbake. Dependent on the viscosity (solvent content) of the resist at the point of edge-bead removal, this drying spin may cause the resist to re-flow and create a secondary edge-bead. In some cases, it may be necessary to (partially) softbake the resist before edge-bead removal.
The constant, <math>k</math>, is a function of the resist viscosity and solid content, as well as the spin-off time. The exponent, <math>a</math>, is dependent on solvent evaporation, and is typically ~½ for UV resists. This means that from the thickness <math>t_1</math> achieved at spin speed <math>w_1</math>, one can estimate the spin speed <math>w_2</math> needed to achieve thickness <math>t_2</math> using the relation:


===Softbake===
<math>t_1 \sdot w_1^{1/2} = t_2 \sdot w_2^{1/2} \rArr w_2 = w_1 \sdot \frac{t_1^2}{t_2^2}</math>
After spin coating, the solvent in the resist formulation must be evaporated in a baking step in order to solidify the resist. This softbake can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface while resting on shallow bumps only 150µm above the hotplate. In a proximity bake, the wafer is first moved into proximity, e.g. 1mm, of the hotplate surface, then held there (on the lift pins) for the duration of the bake.


=Spin coaters at Danchip=


==Spin Track 1 + 2==
For thick SU-8, however, <math>a</math> is observed to be ~1 (probably due to the low solvent content and/or the formation of skin). In this case, the relation simply becomes:


[[image:SpinTrack.jpg|400px|right|thumb|Spin Track 1 + 2 in C-1]]
<math>t_1 \sdot w_1 = t_2 \sdot w_2 \rArr w_2 = w_1 \sdot \frac{t_1}{t_2}</math>


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Track_1_.2B_2 click here]'''
==Backside rinse==
If the spin speed is too low during resist dispense, resist may creep over the edge of the wafer and onto the backside. Some resist tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy".  


===This spin coater is being decommissionned!===
Any resist on the edge and backside of the wafer will contaminate the end effector, softbake hotplate, and subsequent wafers.


''[[Specific_Process_Knowledge/Lithography/Coaters#Coater_Comparison_Table|Coater comparison table]]''
In a backside rinse step, solvent administered through a nozzle to the backside of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the rinse, a short spin at medium spin speed dries the wafer before the softbake.


Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.
During the backside rinse solvent inevitably creeps onto the front side of the wafer. This effect may be used to dissolve and subsequently remove an edge-bead, but it may also leave the rim of the wafer exposed. As an alternative to backside rinse, a wafer, which is contaminated on the backside, may be softbaked in proximity, in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.


The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.
==Edge bead==
During spin coating, resist builds up at the edge of the wafer due to the change in surface tension at the edge, as well as extra drying from turbulence created by the wafer edge.


'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=313 LabManager]'''
This phenomenon is called edge-bead. Dependent on spin coating parameters, the coating may be several times thicker at the edge than in the central area. In a subsequent hard contact exposure step (mask aligner), this edge-bead introduces an undesired proximity gap, which reduces the lateral resolution, and may even cause the wafer to stick to the mask.  


===Process information===
In an edge-bead removal step, solvent administered through a nozzle positioned at the edge of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the removal, a short spin at medium spin speed dries the wafer before the softbake. Dependent on the viscosity (solvent content) of the resist after the edge-bead removal, this drying spin may cause the resist to re-flow and create a secondary edge-bead. In some cases, it may be necessary to (partially) softbake the resist before edge-bead removal.
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing|General Spin Track 1 + 2 process information]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing#HMDS priming only|HMDS priming on Spin Track 1 and 2]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing#AZ MiR 701 (29cps) coating|AZ MiR 701 (29cps) coating on Spin Track 1]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing#AZ nLOF 2020 coating|AZ nLOF 2020 coating on Spin Track 2]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing#Post-exposure baking (PEB)|Post-exposure baking on Spin Track 2]]


=== Equipment performance and process related parameters ===
==Softbake==
After spin coating, the solvent in the resist must be evaporated in a baking step, in order to solidify the resist. This softbake can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface while resting on shallow bumps only 150 µm above the hotplate. In a proximity bake, the wafer is first moved into proximity, e.g. 1mm, of the hotplate surface, then held there (on the lift pins) for the duration of the bake.


{| border="2" cellspacing="0" cellpadding="2"
=Spin coaters at DTU Nanolab=


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Spin Track
{{:Specific Process Knowledge/Lithography/Coaters/GammaUV}}
|style="background:WhiteSmoke; color:black" align="center"|<b>1</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>2</b>
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating and soft baking
*Priming, coating, and baking
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating and soft baking
*Priming, coating, and baking
*Post-exposure baking
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ MiR 701 (29cps)


positive tone
{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}
|style="background:WhiteSmoke; color:black" align="center"|
AZ nLOF 2020


negative tone
{{:Specific Process Knowledge/Lithography/Coaters/GammaEbeam}}
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black" align="center"|
1 - 3 µm
|style="background:WhiteSmoke; color:black" align="center"|
1 - 4 µm
|-
|style="background:LightGrey; color:black"|HMDS contact angle
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
60° - 90°; standard recipe 82° (on SiO2)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
10 - 9990 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1000 - 50000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
90°C
|style="background:WhiteSmoke; color:black" align="center"|
110°C
|-
|style="background:LightGrey; color:black"|HMDS priming temperature
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
50°C
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
100 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Silicon and glass wafers


Film or pattern of all types
{{:Specific Process Knowledge/Lithography/Coaters/RCD8}}
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1 - 25
|-
|}


<br clear="all" />
{{:Specific Process Knowledge/Lithography/Coaters/labspin}}


==Spin Coater: Gamma UV==
=Spray Coater=
[[image:1042_spraycoater_overview.jpg|400x239px|right|thumb|Spray Coater in Cleanroom C-1]]


[[image:SpinCoaterGammaUV.jpg|400px|right|thumb|Spin Coater: Gamma UV in E-5]]
The spray coater at DTU Nanolab is located in Cleanroom C-1. The machine is an ExactaCoat from Sono-tek which can be fitted with one of three different nozzles depending on the nature of the spray coating tasks at hand. The three different nozzles (Impact, AccuMist and Vortex) are optimized for different applications such as spray coating of large areas (e.g. entire wafers), smaller areas (e.g. wafer pieces or other small samples) or already structured samples that cannot be coated uniformly by spin coating. All nozzles use an ultrasonic tranducer for atomizing the solution to be spray coated. It is therefore a prerequisite that all components are compatible with this process. This is the case with most substances, although process parameters may need optimization to give satisfactory results.


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV click here]'''
Practically any sample that will fit inside the spray coater can be processed. Spray patterns are easily programmed either using predefined spray patterns (1D line, 2D rectangles/circles/meanders/spirals) or custom 3D spray patterns.


''[[Specific_Process_Knowledge/Lithography/Coaters#Coater_Comparison_Table|Coater comparison table]]''
The spray coating process as well as major features of the three nozzles are described into more detail in the manual which can be found via the Equipment Info page in LabManager under the Documents sections. The manual can also be found in [http://labmanager.dtu.dk/d4Show.php?id=2523&mach=293 Labmanager] - '''requires login'''


Spin Coater: Gamma UV was installed at Danchip in March 2015. It is a Gamma 2M cluster from Süss MicroTec with spin coating, vapour priming, and baking modules. The system handles 4" and 6" wafers without size conversion, and can be set up to handle 2" or 8".


The coater is equipped with 3 different resists lines:
Further information about the spray coater (manual, process log, technical information etc.) can be found in LabManger:
*AZ MiR 701
*AZ nLOF 2020
*AZ 5214E 
and
*1 syringe, which can be used for various resists.


The processes that are available on the system are developed by Danchip. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=293 Spray coater in LabManager] - '''requires login'''


'''[http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.055_Spin_Coater_GAMMA_UV-720p.mp4 Training video]'''


'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=359 LabManager]'''
== Process development==
'''Spray coating using TI spray:'''<br>
The TI spray resist is the standard spray coater resist used at DTU Nanolab. It requires no dilution and performs well.


===[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing|Process information]]===


[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing#Standard_Processes|Standard Processes:]]
''' Spray coating using other resists:'''<br>
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing#HMDS_priming_2|HMDS]]
Other resists are allowed, but most require dilution, as the spray coater will not work with any resist viscosity higher than 20 cP.
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing#AZ_MiR_701_.2829cps.29_coating|AZ MiR 701]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing#AZ_nLOF_2020_coating|AZ nLOF 2020]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing#AZ_5214E_coating|AZ 5214E]]


=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="2"
==Equipment performance and process related parameters==


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"


!style="background:silver; color:black;" align="center" width="60"|Purpose
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|<b>Spray Coater</b>
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating of PGMEA based UV resists
*Spin coating of E-beam resists <sup>1)</sup>
*Soft baking
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
!style="background:silver; color:black;" align="center"|Purpose
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ MiR 701 (29cps)
*Spraying imprint resists  (primarily mr-NIL 6000E and mr-I 8000E)
* AZ nLOF 2020
*Spraying photoresist (primarily AZ-4562)
* AZ 5214E
*Spraying of other solutions
* 60cc syringe dispense
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|HMDS contact angle
|style="background:LightGrey; color:black"|Substrate handling
|style="background:WhiteSmoke; color:black" align="center"|
60 - 80°
|-
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ MiR 701: 1.5-4 µm
* Can handle almost any sample size and shape (although no automatic handling)
* AZ nLOF 2020: 1.5-5 µm
* AZ 5214E: 1.5-5 µm
* AZ 4562: 5-15 µm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Process parameters
|style="background:LightGrey; color:black"|Permanent media
|style="background:LightGrey; color:black"|Priming temperature
|style="background:WhiteSmoke; color:black" align="center"|
120 °C
|-
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center"|
10 - 6000 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black" align="center"|
10 - 10000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
25 - 200 °C
|-
|style="background:LightGrey; color:black"|Cool plate temperature
|style="background:WhiteSmoke; color:black" align="center"|
21 °C
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* 50 mm wafers <sup>1)</sup>
* No permanent media
* 100 mm wafers
* 150 mm wafers
* 200 mm wafers <sup>1)</sup>
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:WhiteSmoke; color:black" align="center"|
Silicon and glass
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1 - 25
|-
|}
 
<sup>1)</sup> Requires tool change.
 
<br clear="all" />
 
==Spin Coater: Gamma E-beam and UV==
 
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV click here]'''
 
''[[Specific_Process_Knowledge/Lithography/Coaters#Coater_Comparison_Table|Coater comparison table]]''
 
Spin Coater: Gamma E-beam and UV will be installed at Danchip in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.
 
The 2" coater station is equipped with 2 different resists lines:
*AZ 5214E
*AR-P 6200.09 (CSAR)
and
*1 syringe, which can be used for various resists (anisole or PGMEA-based).
 
The 4"/6" coater station is equipped with 4 different resists lines:
*AZ 5214E
*AZ MiR 701
*AR-P 6200.09 (CSAR)
*AZ 4562 
 
The processes that are available on the system are developed by Danchip. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.
 
'''[http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.055_Spin_Coater_GAMMA_UV-720p.mp4 Training video]'''
 
'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=417 LabManager]'''
 
===Process information===
 
[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing|General Process information]]
 
[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes:]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#HMDS_priming_2|HMDS]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AZ_5214E_coating|AZ 5214E on Coater1 and Coater2]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AZ_MiR_701_.2829cps.29_coating|AZ MiR 701 on Coater2]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AR-P_6200_.28CSAR.29_coating|CSAR on Coater1 and Coater2]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AZ_4562_coating|AZ 4562 on Coater2]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Edge_bead_removal_2|Edge bead removal on Coater1 and Coater2]]
 
[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]]
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*HMDS priming
* Two syringe pumps
*Spin coating of anisole based E-beam resists
*Spin coating of PGMEA based UV resists
*Soft baking
*Edge bead removal (CSAR and novolac-based UV resists)
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|Solution viscosity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR)
*Should not exceed 20 cP
* AZ 5214E
* AZ MiR 701 (29cps) ''4"/6" only''
* AZ 4562 ''4"/6" only''
* 30cc syringe dispense ''2" only''
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Chemical properties
|style="background:LightGrey; color:black"|HMDS contact angle
|style="background:WhiteSmoke; color:black" align="center"|
60 - 80° (on Silicon)
|-
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR): 170-500 nm
*Must be non-toxic
* AZ 5214E: 1.5-5 µm
*Must be compatible with titanium
* AZ MiR 701: 1.5-4 µm
*Resistant to ultrasonic sonication
* AZ 4562: 5-25 µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Process parameters
|style="background:LightGrey; color:black"|Priming temperature
|style="background:WhiteSmoke; color:black" align="center"|
120 °C
|-
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center"|
10 - 6000 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black" align="center"|
10 - 10000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
25 - 200 °C
|-
|style="background:LightGrey; color:black"|Cool plate temperature
|style="background:WhiteSmoke; color:black" align="center"|
21 °C
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* 50 mm wafers
*Any sample(s) size and number that fit inside machine
* 100 mm wafers
* 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon, III-V, and glass
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1 - 25
|-
|}
<br clear="all" />
==Spin Coater: RCD8==
[[Image:Spinner_RCD8_C-1.jpg|400px|thumb|Spin coater: RCD8 is located in C-1]]
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8 click here]'''
''[[Specific_Process_Knowledge/Lithography/Coaters#Coater_Comparison_Table|Coater comparison table]]''
Spin Coater: RCD8 is a model RCD8 T spin coater from Süss MicroTec with a motorized media arm and Gyrset functionality. It's primary purpose is spin coating of SU-8 resist. However, due to the possibility of using a non-vacuum chuck, the spin coater is also suitable for coating of substrates with e.g. textured backsides or membranes.
'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=360 LabManager]'''
===[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: RCD8 processing|Process information]]===
*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: RCD8 processing#Spin coating|Spin coating]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: RCD8 processing#Automatic dispense|Automatic dispense]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: RCD8 processing#Recipes|Recipes and templates]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: RCD8 processing#Processing_results|Processing results]]
=== Equipment performance and process related parameters ===
{| border="2" cellspacing="0" cellpadding="2"
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spin coating of SU-8 resists
*'''All chemicals to be spray coated must be approved specifically for spray coating'''
*Spin coating of PGMEA based AZ resists
*Most non-toxic, non-particulate and non-crosslinking material likely to be approved
*Spin coating of wafers with structured backside
*Suspensions challenging due to very low diameter tubing
*Edge bead removal
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
* manual dispense
* automatic dispense from syringe
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black"|
* SU-8 resits: 0.1-200+ µm
* AZ 5214E: 1.5-3 µm
* AZ 4562: 8-15 µm
* AZ MiR 701: 1.5-3 µm
* AZ nLOF 2020: 2-3.5 µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center"|
Vacuum chuck: 10 - 5000 rpm <br>
Non-vacuum chuck: Max. 3000 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black" align="center"|
10 - 3000 rpm/s <br>
Max. 1500 rpm/s with Gyrset
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
All cleanroom materials ?
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1
|-  
|-  
|}
|}


<br clear="all" />
<br clear="all" />
== Manual Spin Coaters ==
''Go back to [[Specific_Process_Knowledge/Lithography/Coaters#Coater_Comparison_Table|Coater comparison table]]''.
{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
! width="350" |
! width="350" |
! width="350" |
|- border="0" align="center"
|[[Image:Labspin_2.JPG|300px]]
|[[Image:Labspin_3_+_fumehood_11.JPG|300px]]
|[[Image:IMG 1175.JPG|300px]]
|- align="center"
| '''Spin Coater: Labspin 02''' ||  '''Spin Coater: LabSpin 03 + fumehood 11''' || '''Spin Coater: Manual All Purpose'''
|- align="center"
| Loacted in wetbench 08 in E-5 ||  Located in wetbench 09 in E-5|| Located in fumehood in C-1
|- align="center"
| LabSpin 6, Süss MicroTec || LabSpin 6, Süss MicroTec || WS-650, Laurell
|- align="center"
| '''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=362 LabManager]''' || '''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=387 LabManager]'''  || '''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=315 LabManager]'''
|}
'''Training video: [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.057_Manual_Spin_Coater-720p.mp4 LabSpin6]'''
===Process information===
Spin curves (LabSpin 6): [[media:AZ5214E_spin_curve.pdf‎|AZ 5214E‎]], [[media:Spin_curve_nLoF2020.pdf‎|AZ nLOF 2020]], [[media:Spin_curve_ZEP520A.pdf‎|ZEP 520A‎]], [[media:Spin_curve_Fox-15.pdf|FOX-15]], [[media:AZ_4562_spin_curve.pdf|AZ 4562‎]], [[Specific_Process_Knowledge/Lithography/CSAR#Spin_Curves|CSAR 6200]]

Latest revision as of 13:47, 10 May 2023

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

Coater Comparison Table

Equipment Spin Coater: Gamma UV Spin Coater: Süss Stepper Spin Coater: Gamma E-beam and UV Spin Coater: RCD8 Spin Coater: LabSpin 02 Spin Coater: LabSpin 03 Spray Coater
Purpose
  • In-line substrate HMDS priming
  • Coating and baking of
    • AZ MiR 701 (29cps)
    • AZ nLOF 2020
    • AZ 5214E
  • Coating and baking of
    • BARC (DUV42S-6)
    • KRF M230Y
    • KRF M35G
    • UVN2300-0.8
  • In-line substrate HMDS priming
  • Coating and baking of
    • AR-P 6200 (CSAR)
    • AZ 5214E
    • AZ MiR 701 (29cps)
    • AZ 4562
  • Edge bead removal on novolac-based resist and SU-8
  • Coating of
    • SU-8
    • AZ 5214E
    • AZ 4562
    • AZ MiR
    • AZ nLOF
  • Edge bead removal
  • Coating of E-beam resists
    • CSAR, ZEP, PMMA/MMA, HSQ(FOx)
  • Coating of UV resists
    • AZ5214E, AZ4562, AZMiR701, AZnLOF, SU-8
  • Coating of imprint resists
  • Spraying imprint resist
  • Spraying photoresist
  • Spraying of other solutions
Performance Substrate handling
  • Cassette-to-cassette
  • Vacuum handling and detection
  • Vacuum spin chuck
  • Cassette-to-cassette
  • Vacuum handling and detection
  • Vacuum spin chuck
  • Cassette-to-cassette
  • Vacuum handling and detection
  • Vacuum spin chuck
  • Single substrate
  • Vacuum chuck for 4" and 6"
  • 4" non-vacuum chuck for fragile substrates
  • Single substrate
  • Vacuum chucks for chips, 2", 4", and 6"
  • 4" edge handling chuck

Can handle almost any sample size and shape

Permanent media
  • AZ MiR 701 (29cps) resist
  • AZ nLOF 2020 resist
  • AZ 5214E resist
  • PGMEA solvent for backside rinse and spinner bowl cleaning
  • DUV42S-6 (BARC)
  • KRF M230Y resist
  • KRF M35G resist
  • AR-P 6200.09 (CSAR) for 2", 4", and 6"
  • AZ5214E for 2", 4", and 6"
  • AZ MiR 701 (29cps) for 4", and 6"
  • AZ4562 for 4", and 6"
  • PGMEA solvent for edge bead removal, backside rinse, and spinner bowl cleaning

No permanent media

Only manual dispense

No permanent media

Manual dispense option
  • no manual dispense
  • syringe dispense (60cc) of PGMEA-based resist
  • no manual dispense
  • syringe dispense (60cc) of PGMEA and anisole-based resist
  • no manual dispense
  • syringe dispense (30cc) of PGMEA and anisole-based resist (2" only)
  • yes
  • pneumatic dispense for SU-8 resist and EBR solvent
Only manual dispense

Two syringe pumps

Process parameter range Spindle speed

10 - 6000 rpm

10 - 6000 rpm

10 - 6000 rpm

10 - 5000 rpm (3000 rpm with non-vacuum chuck)

100 - 5000 rpm (3000 rpm with edge handling chuck)

Gyrset

no

no

no

optional (max. speed 3000 rpm)

no

Substrates Substrate size
  • 50 mm wafers (tool change required)
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers (tool change required)
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers (may require tool change)
  • 2" or 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafer
  • 150 mm wafer
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • small pieces down to 10x10 mm2

Any sample(s) that fit inside machine

Batch size

1 - 25

1 - 25

1 - 25

1

1

1

Allowed materials
  • Silicon
  • Glass

No resist or crystalbond allowed in the HMDS module

  • Silicon
  • Glass
  • Silicon
  • III-V materials
  • Glass

No resist or crystalbond allowed in the HMDS module

All cleanroom materials except III-V materials

  • Silicon
  • III-V materials
  • Glass
  • All chemicals to be spray coated must be approved specifically for spray coating
  • Any non-toxic, non-particulate and non-crosslinking material is likely to be approved


Spin coating

The typical spin coating process consists of the following steps:

  1. Priming (typically HMDS)
  2. Resist dispense (static or dynamic)
    • Optional: Acceleration to a low spin speed if dynamic dispense is used
    • Optional: Resist spreading at low spin speed
  3. Spin-off
  4. Backside rinse (typically during spin-off)
  5. Optional: Edge-bead removal
  6. Softbake (contact or proximity)


After priming, the wafer is is transferred to the spin coater. If static dispense is used, the wafer remains static during the resist dispense. In the case of dynamic dispense, the wafer rotates at low spin speed during the dispense. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.

Spin-off

The spin-off cycle determines the thickness of the resist coating. For a given resist, the thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law:

The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.

The coated thickness, , as a function of the spin-off speed, , follows an inverse power-law:

The constant, , is a function of the resist viscosity and solid content, as well as the spin-off time. The exponent, , is dependent on solvent evaporation, and is typically ~½ for UV resists. This means that from the thickness achieved at spin speed , one can estimate the spin speed needed to achieve thickness using the relation:


For thick SU-8, however, is observed to be ~1 (probably due to the low solvent content and/or the formation of skin). In this case, the relation simply becomes:

Backside rinse

If the spin speed is too low during resist dispense, resist may creep over the edge of the wafer and onto the backside. Some resist tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy".

Any resist on the edge and backside of the wafer will contaminate the end effector, softbake hotplate, and subsequent wafers.

In a backside rinse step, solvent administered through a nozzle to the backside of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the rinse, a short spin at medium spin speed dries the wafer before the softbake.

During the backside rinse solvent inevitably creeps onto the front side of the wafer. This effect may be used to dissolve and subsequently remove an edge-bead, but it may also leave the rim of the wafer exposed. As an alternative to backside rinse, a wafer, which is contaminated on the backside, may be softbaked in proximity, in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.

Edge bead

During spin coating, resist builds up at the edge of the wafer due to the change in surface tension at the edge, as well as extra drying from turbulence created by the wafer edge.

This phenomenon is called edge-bead. Dependent on spin coating parameters, the coating may be several times thicker at the edge than in the central area. In a subsequent hard contact exposure step (mask aligner), this edge-bead introduces an undesired proximity gap, which reduces the lateral resolution, and may even cause the wafer to stick to the mask.

In an edge-bead removal step, solvent administered through a nozzle positioned at the edge of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the removal, a short spin at medium spin speed dries the wafer before the softbake. Dependent on the viscosity (solvent content) of the resist after the edge-bead removal, this drying spin may cause the resist to re-flow and create a secondary edge-bead. In some cases, it may be necessary to (partially) softbake the resist before edge-bead removal.

Softbake

After spin coating, the solvent in the resist must be evaporated in a baking step, in order to solidify the resist. This softbake can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface while resting on shallow bumps only 150 µm above the hotplate. In a proximity bake, the wafer is first moved into proximity, e.g. 1mm, of the hotplate surface, then held there (on the lift pins) for the duration of the bake.

Spin coaters at DTU Nanolab

Spin Coater: Gamma UV

Spin Coater: Gamma UV in E-5

Spin Coater: Gamma UV was installed at DTU Nanolab in March 2015. It is a Gamma 2M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules.

The system handles 4" and 6" wafers without size conversion, and can be set up to handle 2" or 8".

The coater is equipped with 3 different resist lines, as well as 1 syringe line:

  • AZ MiR 701
  • AZ nLOF 2020
  • AZ 5214E
  • Syringe, which can be used for various resists

The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.

Training video

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager - requires login

Process information

Equipment performance and process related parameters

Purpose
  • HMDS priming
  • Spin coating of PGMEA based UV resists
  • Spin coating of E-beam resists 1)
  • Soft baking
Resist
  • AZ MiR 701 (29cps)
  • AZ nLOF 2020
  • AZ 5214E
  • 60cc syringe dispense
Performance HMDS contact angle

  60 - 80°

Coating thickness
  • AZ MiR 701: 1.5-4 µm
  • AZ nLOF 2020: 1.5-5 µm
  • AZ 5214E: 1.5-5 µm
  • AZ 4562: 5-15 µm
Process parameters Priming temperature

  120 °C

Spin speed

  10 - 6000 rpm

Spin acceleration

  10 - 10000 rpm/s

Hotplate temperature

  25 - 200 °C

Cool plate temperature

  21 °C

Substrates Substrate size
  • 50 mm wafers 1)
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers 1)
Allowed materials

Silicon and glass

Resists and crystalbond are not allowed in the HMDS module

Batch

  1 - 25

1) Requires tool change.

Spin coater: Süss stepper

The SÜSS Spinner-Stepper is placed in F-3

This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with the 3 resist lines (DUV42S-6, KRF M230Y, and KRF M35G), as well as a syringe dispense system.

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager:

Equipment info in LabManager - requires login

DUV resist overview

The spinning process will be performed by the customer together with the Photolith group of Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.


Bottom Anti Reflection Coating (BARC):


Positive DUV resist for spin coating in 600-300nm thickness range:


Positive DUV resist for spin coating in 1600-800nm thickness range:


Negative DUV resist for spin coating in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range:

Process information

Equipment performance and process related parameters

Purpose
  • Spin coating and soft baking of BARC
  • Spin coating and soft baking of DUV resists
  • Post exposure baking
Resist
  • BARC DUV42S-6
  • Positive tone resist KRF M230Y
  • Positive tone resist KRF M35G
  • Negative tone resist UVN2300-0.8
Performance Coating thickness
  • BARC DUV42S-6 60-90nm
  • Positive tone resist KRF M230Y 300-600nm
  • Positive tone resist KRF M35G 800-1600nm
  • Negative tone resist UVN2300-0.8 200-1400nm
Process parameters Spin speed

  10 - 5000 rpm

Spin acceleration

  100 - 10000 rpm/s

Hotplate temperature
  • 175°C for BARC baking
  • 130°C for positive tone resist soft baking and post exposure baking
  • 100°C for negative tone resist soft baking and post exposure baking
Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers (requires tool change)
Allowed materials
  • Any standard cleanroom material
Batch

  1 - 25


Spin Coater: Gamma E-beam and UV

Spin Coater: Gamma E-beam & UV in E-5

Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.

The 2" coater station is equipped with 1 resist line, as well as 1 syringe line:

  • AR-P 6200.09 (CSAR)
  • Syringe, which can be used for various resists (anisole-based or PGMEA-based). We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.


The 4"/6" coater station is equipped with 4 different resists lines:

  • AZ 5214E
  • AZ MiR 701
  • AR-P 6200.09 (CSAR)
  • AZ 4562

The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and requires batch processing - it is not for processing a few wafers now and then.

Training video

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager - requires login

Process information

Equipment performance and process related parameters

Purpose
  • HMDS priming
  • Spin coating of anisole based E-beam resists
  • Spin coating of PGMEA based UV resists
  • Soft baking
  • Edge bead removal (CSAR and novolac-based UV resists)
Resist
  • AR-P 6200.09 (CSAR)
  • AZ 5214E
  • AZ MiR 701 (29cps)
  • AZ 4562
  • 30cc syringe dispense
Performance HMDS contact angle

  60 - 80° (on Silicon)

Coating thickness
  • AR-P 6200.09 (CSAR): 170-500 nm
  • AZ 5214E: 1.5-5 µm
  • AZ MiR 701: 1.5-4 µm
  • AZ 4562: 5-25 µm
Process parameters Priming temperature

  120 °C

Spin speed

  10 - 6000 rpm

Spin acceleration

  10 - 10000 rpm/s

Hotplate temperature

  25 - 200 °C

Cool plate temperature

  21 °C

Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

  Silicon, III-V, and glass

  Resists and crystalbond are not allowed in the HMDS module

Batch

  1 - 25


Spin Coater: RCD8

Spin coater: RCD8 is located in C-1

Spin Coater: RCD8 is a model RCD8 T spin coater from Süss MicroTec with a motorized media arm and Gyrset functionality. It's primary purpose is spin coating of SU-8 resist.

However, due to the possibility of using a non-vacuum chuck, the spin coater is also suitable for coating of substrates with e.g. textured backsides or membranes.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process information

Equipment performance and process related parameters

Purpose
  • Spin coating of SU-8 resists
  • Spin coating of PGMEA based AZ resists
  • Spin coating of wafers with structured backside
  • Edge bead removal
Resist
  • manual dispense
  • automatic dispense from syringe
Performance Coating thickness
  • SU-8 resits: 0.1-200+ µm
  • AZ 5214E: 1.5-3 µm
  • AZ 4562: 8-15 µm
  • AZ MiR 701: 1.5-3 µm
  • AZ nLOF 2020: 2-3.5 µm
Process parameters Spin speed

Vacuum chuck: 10 - 5000 rpm
Non-vacuum chuck: Max. 3000 rpm

Spin acceleration

10 - 3000 rpm/s
Max. 1500 rpm/s with Gyrset

Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers (vacuum chuck only)
Allowed materials

All cleanroom materials ?

Batch

1


Spin coater: Labspin

Spin Coater: Labspin 02 Spin Coater: Labspin 03 + fumehood 11
Loacted in wetbench 08 in E-5 Located in wetbench 09 in E-5
LabSpin 6, Süss MicroTec LabSpin 6, Süss MicroTec


Training video: LabSpin02 + 03

Process information

Spin curves (LabSpin 6):

More information on resists (incl. spin curves) is available in the resist overview.

Available bowlsets:

Bowlset name Component solvent Cleaning solvent List of resists Comments
AZ resist PGMEA/Ethyl Lactate Acetone

AZ 5214E
AZ 4562
AZ MiR 701
AZ nLOF 2000 series
mr-I8100R

Two bowlsets available
CSAR/ZEP/mrEBL/PMMA Anisole Remover 1165

AR-P 6200 series (CSAR 62)
ZEP520A
mr EBL 6000
PMMA (in anisole)
UV5
mr-T85L
XNIL26
mri8000
mr-I 7010E
mr-XNIL26_SF
mrNIL210

HSQ/AR-N 8200 MIBK/PGMEA Acetone

HSQ (FOx series)
AR-N 8200

OrmoComp/OrmoStamp Propyl Acetate Acetone

OrmoComp
OrmoStamp
OrmoPrime
OrmoClad
Inkron
mr-I-7030R
mr-I 8020E
mr-I-7010E
mrNIL210
mr-I 8500E
mr-T85
MRT HI01XP
Protek B3
mrUVCur21
mr-I 8100E_XP
mrNIL210
MRT HI01XP
mr-NIL 6000.3E
mr-I 8100R_XP

BCB/CYCLOTENE Mesitylene T1100

3022-X
4022-X

Epoxy/Acrylate Cyclopentanone/PGMEA Acetone

SU-8 2000 series
mr-DWL
LOR (1A, 3A, 5A)
mr-i 8030e
mr-NIL200
DELO-PRE/OM4310
OrmoStamp
Inkron
mr-I 8020E
OM4310

AR-P 617/AR-N 7520 PGME/PGMEA Acetone AR-N 7500 series
Polymer Ps-b-PDMS/block copolymer Heptane Ethyl Acetate
DIRTY bowlset Anything Organic Use the appropriate cleaning reagent for your resist


Equipment performance and process related parameters

Purpose Labspin

Spin coating of resist ONLY in dedicated bowlsets

Please do NOT use substances which is not for the dedicated bowlsets

All purpose

Spin coating of dirty substances in All purpose

Process parameters Spin speed
  • Vacuum chuck: 100 - 8000 rpm
  • Edge handling chuck: Max. 3000 rpm
Spin acceleration
  • 200 - 4000 rpm/s
Substrates Substrate size
  • Chips 5x5 mm and up
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials

Please ONLY use substances which is for the dedicated bowlsets in labspins

Batch

1


Spray Coater

Spray Coater in Cleanroom C-1

The spray coater at DTU Nanolab is located in Cleanroom C-1. The machine is an ExactaCoat from Sono-tek which can be fitted with one of three different nozzles depending on the nature of the spray coating tasks at hand. The three different nozzles (Impact, AccuMist and Vortex) are optimized for different applications such as spray coating of large areas (e.g. entire wafers), smaller areas (e.g. wafer pieces or other small samples) or already structured samples that cannot be coated uniformly by spin coating. All nozzles use an ultrasonic tranducer for atomizing the solution to be spray coated. It is therefore a prerequisite that all components are compatible with this process. This is the case with most substances, although process parameters may need optimization to give satisfactory results.

Practically any sample that will fit inside the spray coater can be processed. Spray patterns are easily programmed either using predefined spray patterns (1D line, 2D rectangles/circles/meanders/spirals) or custom 3D spray patterns.

The spray coating process as well as major features of the three nozzles are described into more detail in the manual which can be found via the Equipment Info page in LabManager under the Documents sections. The manual can also be found in Labmanager - requires login


Further information about the spray coater (manual, process log, technical information etc.) can be found in LabManger:

Spray coater in LabManager - requires login


Process development

Spray coating using TI spray:
The TI spray resist is the standard spray coater resist used at DTU Nanolab. It requires no dilution and performs well.


Spray coating using other resists:
Other resists are allowed, but most require dilution, as the spray coater will not work with any resist viscosity higher than 20 cP.


Equipment performance and process related parameters

Equipment Spray Coater
Purpose
  • Spraying imprint resists (primarily mr-NIL 6000E and mr-I 8000E)
  • Spraying photoresist (primarily AZ-4562)
  • Spraying of other solutions
Performance Substrate handling
  • Can handle almost any sample size and shape (although no automatic handling)
Permanent media
  • No permanent media
Manual dispense option
  • Two syringe pumps
Process parameter range Solution viscosity
  • Should not exceed 20 cP
Chemical properties
  • Must be non-toxic
  • Must be compatible with titanium
  • Resistant to ultrasonic sonication
Substrates Batch size
  • Any sample(s) size and number that fit inside machine
Allowed materials
  • All chemicals to be spray coated must be approved specifically for spray coating
  • Most non-toxic, non-particulate and non-crosslinking material likely to be approved
  • Suspensions challenging due to very low diameter tubing