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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip click here]'''
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= Strip Comparison Table =
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
{| border="2" cellspacing="0" cellpadding="2"
 
[[Category: Equipment|Lithography strip]]
[[Category: Lithography|Strip]]


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
__TOC__
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Rough Acetone Strip|Rough Acetone Strip]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Fine Acetone Strip|Fine Acetone Strip]]</b>


= Strip Comparison Table =
{| class="wikitable"
|-
!
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
! scope=row style="text-align: left;" |  Purpose
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
| Resist stripping
| Metal lift-off
|-
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose
! scope=row style="text-align: left;" | Method
|style="background:LightGrey; color:black"|
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
*All purposes
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
*Clean wafers only, no metal
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
*III-V materials only
|style="background:WhiteSmoke; color:black"|
*Resist strip
|style="background:WhiteSmoke; color:black"|
*Resist strip
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Method
! scope=row style="text-align: left;" | Process gasses
|style="background:LightGrey; color:black"|Minimum feature size
| O<sub>2</sub> (50 sccm)
|style="background:WhiteSmoke; color:black"|
|
*
*O<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub> (0-500 sccm)
*  
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*
*N<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
*CF<sub>4</sub> (0-200 sccm)
*
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
! scope=row style="text-align: left;" | Process power
|style="background:LightGrey; color:black"|Positive Process
| 10-100 W (10-100%)
|style="background:WhiteSmoke; color:black"|
| 150-1000 W
*
| 150-1000 W
|style="background:WhiteSmoke; color:black"|
| NA
*
| NA
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|-
|style="background:LightGrey; color:black"|Negative Process
! scope=row style="text-align: left;" | Process solvent
|style="background:WhiteSmoke; color:black"|
| NA
*
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*
|
|style="background:WhiteSmoke; color:black"|
*NMP (Remover 1165)
*
*IPA (rinsing agent)
|style="background:WhiteSmoke; color:black"|
|
*
*NMP (Remover 1165)
|style="background:WhiteSmoke; color:black"|
*IPA (rinsing agent)
*
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate batch
|style="background:LightGrey; color:black"|Batch size
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1
*1 - 30 100 mm wafers
|
*1 - 30 150 mm wafers
*Chips: several
|style="background:WhiteSmoke; color:black"|
*50 mm wafer: several
*1 small sample
*100 mm wafer: 1-25
*1 50 mm wafer
*150 mm wafer: 1-25
*1 - 30 100 mm wafers
*200 mm wafer: 1-25
*1 - 30 150 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1-25
*1 100 mm wafer
*150 mm wafer: 1-25
|style="background:WhiteSmoke; color:black"|
*200 mm wafer: 1-25
*1 - 25 100 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*100 mm wafer: 1-25
*1 - 25 100 mm wafers
*150 mm wafer: 1-25
 
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate materials
|style="background:WhiteSmoke; color:black"|
|
*Si and silicon oxide, silicon nitride
*<span style="color:red">'''No polymer substrates'''</span><br>
*Quartz, pyrex
*Silicon substrates
*Metal patterning
*III-V substrates
|style="background:WhiteSmoke; color:black"|
*Glass substrates
*No metal!
*Films, or patterned films, of any material except type IV (Pb, Te)
*Si and silicon oxide, silicon nitride
|
*Quartz, pyrex
*<span style="color:red">'''No metals'''</span><br>
|style="background:WhiteSmoke; color:black"|
*<span style="color:red">'''No metal oxides'''</span><br>
*III-V compounds
*<span style="color:red">'''No III-V materials'''</span><br>
|style="background:WhiteSmoke; color:black"|
*Silicon substrates
*Si and silicon oxide, silicon nitride
*Glass substrates
*Quartz, pyrex
*Polymer substrates
|style="background:WhiteSmoke; color:black"|
*Films, or patterned films, of resists/polymers
*Si and silicon oxide, silicon nitride
|
*Quartz, pyrex
*Silicon substrates
|-  
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


=Plasma Asher 1 =
= Plasma Ashing process parameters=
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]
 
The Plasma Asher1( 300 auto load model) can be used for the following process:
 
*Photoresist stripping
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers


The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
{| class="wikitable"
 
 
==Process Information==
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]]
 
 
==Overview of typical processes==
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Photoresist stripping
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
|'''Process pressure'''
|0.8- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|O<sub>2</sub>, N<sub>2</sub>
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
|O<sub>2</sub>
|-
|-
|'''Process power'''
! scope=row style="text-align: left;" | Process pressure
|600-1000W
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|150-300W
|1000W or less for heat- sensitive materials
|-
|-
|'''Process time'''
! scope=row style="text-align: left;" | Process gasses
|5-60min, depending of photoresist thickness
|
|a few seconds to a few minutes
*O<sub>2</sub> (100 sccm)
|Between 0.5 and 20 hours, depending on the material
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
|-
|'''Batch size'''
! scope=row style="text-align: left;" | Process power
|1-10 wafers at a time
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|1 wafer at a time
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Process time
|2"-6"  
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|2"-6"
|2"-6"
|-
|'''Allowed materials'''
|All
|All
|All
 
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1 || 1
|}
|}


<br clear="all" />
<br clear="all" />


A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
 
=Plasma Asher 2 =
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
 
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
 
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
 
The typical process parameters when operating the equipment:
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar
 
Gas: O2
 
Power: 600 - 1000 watts


Time: 5 -30 min., depending on photoresist type and thickness
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}


A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}


A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
At a load at 2 Fused silicawafers resist removed 0.01-01,5um


The other materials have not been tested yet.
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}


=III-V Plasma Asher =
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


=Rough Acetone Strip=
{| border="1" cellspacing="0" cellpadding="4" align="right"
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|}


This acetone strip is only for wafers without metal and SU-8.
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
There are two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
 
 
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
=Overview of acetone benches=
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Acetone strip
! Lift-off
|-
|'''General description'''
|
wet stripping of resist
|
lift-off process
|-
|'''Chemical solution'''
|CH<sub>3</sub>COCH<sub>3</sub>
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|'''Process temperature'''
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|'''Batch size'''
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|'''Size of substrate'''
|
4" wafers
|
4" wafers
|-
|'''Allowed materials'''
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
*All metals
|-
|}

Latest revision as of 12:31, 13 January 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Resist stripping
  • Resist descum
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)


Plasma Ashing process parameters

Resist stripping (PA4 & PA5) Descum (PA3) Descum (PA4 & PA5) Surface treatment Other ashing of organic material
Process pressure 1.3 mbar 0.8 mbar 1.3 mbar 0.5-1.5 mbar 0.5-1.5 mbar
Process gasses
  • O2 (100 sccm)
  • N2 (100 sccm)
  • O2 (45 sccm)
  • O2 (100 sccm)
  • N2 (100 sccm)
  • O2
  • N2
  • CF4
  • O2
Process power 1000 W 100 W 200 W 150-1000 W 150-1000 W
Process time 20-90 minutes 1-10 minutes 5-15 minutes Seconds to minutes Many hours, material dependent
Substrate batch 1-25 1-2 1-25 1 1


Plasma Asher 3: Descum

Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.

Product name: Diener Pico Plasma Asher
Year of purchase: 2014

The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.

In this machine, only Oxygen is used for processing.

Typical process parameters:
Process: Photoresist descumming
Pressure: 0.2-0.8 mbar
Gas: 45 sccm O2
Power: 100 W (100%)
Time: 1 -10 minutes (depending on photoresist type and thickness)

Other materials have not been tested.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

Detailed information about descum processing on Plasma asher 3: Descum can be found here.

Plasma Asher 4

Plasma asher 4 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 4 can be used for the following processes:

  • Photoresist stripping
  • Descumming
  • Surface cleaning
  • Removal of organic passivation layers and masks


Plasma asher 4 has the following material restrictions:

  • No metals allowed
  • No metal oxides allowed
  • No III-V materials allowed

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.

  • O2: 100 sccm
  • N2: 100 sccm
  • Pressure (DSC): 1.3 mbar
  • Power: 1000 W
  • Time (single wafer): 20-30 minutes
  • Time (full boat): 90 minutes


Process development notes

Information about process development for plasma asher 04 and plasma asher 05 can be found here.

Plasma Asher 5

Plasma asher 5 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 5 can be used for the following processes:

  • Photoresist stripping
  • Descumming
  • Surface cleaning
  • Removal of organic passivation layers and masks


Furthermore plasma processing using CF4 in plasma asher 5 can be used for:

  • Etching of glass and ceramic
  • Etching of SiO2, Si3N4, Si
  • Removal of polyimide layers


Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Process Information

Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 here.


Processes specifically only for plasma asher 5:


Resist Strip

Resist strip bench in D-3

This resist strip is only for wafers without metal and SU-8.

There are one Remover 1165 bath for stripping and one IPA bath for rinsing.

Here are the main rules for resist strip use:

  • Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
  • After the strip rinse your wafers in the IPA bath for 2-3 min.
  • Rinse your wafers for 4-5 min. in running water after stripping.


The user manual and contact information can be found in LabManager: Resist Strip - requires login

Overview of wet bench 06 and 07

Resist Strip Lift-off
Process Wet resist strip Metal lift-off process
Chemical Remover 1165 (NMP) Remover 1165 (NMP)
Process temperature Up to 65°C Up to 65°C
Substrate batch 1-25 wafers 1-25 wafers
Substrate size
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Materials allowed
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
 All metals except Type IV (Pb, Te)


Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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