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= Strip Comparison Table =
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
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*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
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=Plasma asher 1 =
= Plasma Ashing process parameters=
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]
The Plasma Asher1( 300 auto load model) can be used for the following process:
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*Photoresist stripping
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
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A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
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=Plasma asher 2 =
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
The typical process parameters when operating the equipment:
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar
Gas: O2
Power: 600 - 1000 watts
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
Time: 5 -30 min., depending on photoresist type and thickness
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
The other materials have not been tested yet.
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
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This acetone strip is only for wafers without metal and SU-8!
There is two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the resists remains.
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
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=Lift-off wet bench=
[[Image:Acetone_lift-off.jpg|300x300px|thumb|Acetone lift-off: positioned in cleanroom 3]]
This bench is only for wafers with metal!
Here are the main rules for lift-off bench use:
*Place the wafers in a dedicated wafer holder.
*Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
*Rinse your wafers for 4-5 min. in running water after stripping.
Find more info about the lift-off process here: [[Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process]]
Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.
Product name: Diener Pico Plasma Asher
Year of purchase: 2014
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen is used for processing.
Typical process parameters:
Process: Photoresist descumming
Pressure: 0.2-0.8 mbar
Gas: 45 sccm O2
Power: 100 W (100%)
Time: 1 -10 minutes (depending on photoresist type and thickness)
Other materials have not been tested.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Detailed information about descum processing on Plasma asher 3: Descum can be found here.
Plasma Asher 4
Plasma asher 4 in cleanroom E-5.
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
Photoresist stripping
Descumming
Surface cleaning
Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
No metals allowed
No metal oxides allowed
No III-V materials allowed
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 5 can be used for the following processes:
Photoresist stripping
Descumming
Surface cleaning
Removal of organic passivation layers and masks
Furthermore plasma processing using CF4 in plasma asher 5 can be used for:
Etching of glass and ceramic
Etching of SiO2, Si3N4, Si
Removal of polyimide layers
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Process Information
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 here.
