Specific Process Knowledge/Lithography/Resist/Ebeamresist
Standard E-beam resists and process guidelines
DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.
| Resist | Polarity | Manufacturer | Comments | Technical reports | Spin Coater | Thinner | Developer | Rinse | Remover | Process flows (in docx-format) |
| CSAR AR-P 6200 | Positive | AllResist | Standard positive resist, very similar to ZEP520. | AR-P 6200 info | Gamma E-beam & UV or Labspin 2/3 | Anisole |
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IPA |
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Process Flow CSAR.docx Process Flow CSAR with ESPACER Process Flow CSAR with Al Process Flow LOR5A with CSAR |
| Medusa AR-N 8200 | Negative | AllResist | Both e-beam and DUV sensitive resist. | AR-N 8200 info | Labspin 2/3 | AR 600-07 | AR 300-47:DIW (1:1) | DIW | BOE | |
| AR-N 7500 | Negative | AllResist | Both e-beam, DUV and UV-sensitive resist. | AR-N 7500 info | Labspin 2/3 | PGMEA |
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DIW |
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Non-Standard E-beam resists
It is possible to obtain permission to user other resists at DTU Nanolab, users must however provide these resists and possibly developers themselves. A non-exhaustive list of user supplied EBL resist used at DTU Nanolab and some process guidelines can be found in the table below.
| Resist | Polarity | Manufacturer | Comments | Technical reports | Spin Coater | Thinner | Developer | Rinse | Remover | Process flows (in docx-format) |
| ZEP520A | Positive resist, contact Lithography if you plan to use this resist | ZEON | Positive resist | ZEP520A.pdf, ZEP520A spin curves on SSE Spinner | See table here | Anisole | ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. JJAP-51-06FC05.pdf, JVB001037.pdf | IPA | acetone/1165 | Process_Flow_ZEP.docx
|
| Copolymer AR-P 617 | Positive | AllResist | Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact Lithography for information. | AR_P617.pdf | See table here | PGME | AR 600-55, MIBK:IPA | acetone/1165 | Trilayer stack: Process_Flow_Trilayer_Ebeam_Resist.docx | |
| mr EBL 6000.1 | Negative | MicroResist | Standard negative resist | mrEBL6000 processing Guidelines.pdf | See table here | Anisole | mr DEV | IPA | mr REM | Process_Flow_mrEBL6000.docx |
| HSQ (XR-1541) | Negative | DOW Corning | Approved. Standard negative resist | HSQ Dow Corning, MSDS HSQ | See table here | TMAH, AZ400K:H2O | H2O | process flow HSQ | ||
| AR-N 7520 | Negative | AllResist | Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact Peixiong Shi for information. | AR-N7500-7520.pdf | See table here | PGMEA | AR 300-47, TMAH | H2O | ||
| PMMA | Positive | AllResist | We have various types of PMMA in the cleanroom. Please contact Lithography for information. | See table here | Anisole | MIBK:IPA (1:3), IPA:H2O | IPA | acetone/1165/Pirahna |
| |
| ZEP7000 | Positive | ZEON | Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact Lithography for information. | ZEP7000.pdf | See table here | Anisole | ZED-500/Hexyl Acetate,n-amyl acetate, oxylene. | IPA | acetone/1165 | Trilayer stack: Process_Flow_Trilayer_Ebeam_Resist.docx |