Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si

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Revision as of 14:26, 26 January 2023 by Pevo (talk | contribs) (Created page with " ==Results from the acceptance test 2012== {| border="2" cellspacing="1" cellpadding="8" !Recipe name !Deposition rate [nm/min] !Refractive index@630nm !Thickness variation on center wafer !Thickness variation along the boat !Surface roughness [nm] !Sheet resistance [Ohms/square] !Boron concentation [boron atoms/cm<sup>3</sup>] !Comments |- |"DOPEPOLY" |~ 4.0-4.1 (4" wafers) | 1.29%-1.38% (4" wafers) | 1.63%-1.81% (4" wafers) | |~ 4.83, measured with AFM standard tip...")
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Results from the acceptance test 2012

Recipe name Deposition rate [nm/min] Refractive index@630nm Thickness variation on center wafer Thickness variation along the boat Surface roughness [nm] Sheet resistance [Ohms/square] Boron concentation [boron atoms/cm3] Comments
"DOPEPOLY" ~ 4.0-4.1 (4" wafers)

1.29%-1.38% (4" wafers)

1.63%-1.81% (4" wafers)

~ 4.83, measured with AFM standard tip (273 nm layer)
AFM image for surface roughness measurement. 273 nm boron doped polySi deposited using the "DOPDPOLY" recipe.

157-171, variation over boat 4.5% (4" wafers)

~ 1021 boron atoms/cm3. "Dopepoly" recipe, 30 minutes deposition, Poly-Si thickness is ~104nm, Aug. 2014.
Boron concentration measured by SIMS through a boron doped poly-Si layer on 110nm Silicon dioxide, N-type Si(100) Substrate.
 Run-to-run uniformity: 1.43 % (4" wafers, 3 runs)
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