Specific Process Knowledge/Thin film deposition/PECVD

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PECVD Plasma Enhanced Chemical Vapor Deposition

PECVD2 (part of cluster2) - positioned in cleanroom C-1

We have two PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.

PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.

All though PECVD2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.

The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:

PECVD2 in LabManager
PECVD3 in LabManager

Process information on PECVD2 and PECVD3

Overview of the performance of PECVD thin films and some process related parameters

PECVD		PECVD2	PECVD3
Purpose	Deposition of dielectrica	Silicon oxide Silicon nitride Silicon oxynitride PBSG (Phosphorous Boron doped Silica Glass) Silicon oxide doped with Germanium	Silicon oxide Silicon nitride Silicon oxynitride PBSG (Phosphorous Boron doped Silica Glass) Silicon oxide doped with Germanium
Performance	Film thickness	~10nm - 30µm	~10nm - 30µm
	Index of refraction	~1.4-2.1	~1.4-2.1
	Step coverage	In general: Not so good PBSG: Floats at 1000^oC	In general: Not so good PBSG: Floats at 1000^oC
	Film quality	Not so dense film Hydrogen will be incorporated in the films	Not so dense film Hydrogen will be incorporated in the films
Process parameter range	Process Temperature	300 ^oC	300 ^oC
	Process pressure	~200-900 mTorr	~200-900 mTorr
	Gas flows	SiH $_{4}$ :0-50 sccm N $_{2}$ O:0-4260 sccm NH $_{3}$ :0-740 sccm NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} :0-3000 sccm GeH $_{4}$ :0-6.00 sccm 5%PH $_{3}$ :0-100 sccm 3%B $_{2}$ H $_{6}$ :0-1000 sccm	SiH $_{4}$ :0-60 sccm N $_{2}$ O:0-3000 sccm NH $_{3}$ :0-1000 sccm N $_{2}$ :0-3000 sccm GeH $_{4}$ :0-6.00 sccm 5%PH $_{3}$ :0-99 sccm 5%B $_{2}$ H $_{6}$ :0-1000 sccm
Substrates	Batch size	One 4" wafer per run One 6" wafer per run Or several smaler pieces on carrier wafer Deposition on one side of the substrate	1-3 4" wafer per run 1 6" wafer per run Or several smaler pieces Deposition on one side of the substrate
	Materials allowed	Silicon wafers, Quartz (fused silica) wafers, with layers of silicon oxide or silicon (oxy)nitride III-V wafers (on special carriers)	Silicon wafers, Quarts (fused silica) wafers with layers of silicon oxide or silicon (oxy)nitride Layers of Al Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!