Specific Process Knowledge/Lithography/Coaters/GammaEbeam

Spin Coater: Gamma E-beam and UV

Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.

The 2" coater station is equipped with 1 resist line, as well as 1 syringe line:

AR-P 6200.09 (CSAR)
Syringe, which can be used for various resists (anisole-based or PGMEA-based).

The 4"/6" coater station is equipped with 4 different resists lines:

AZ 5214E
AZ MiR 701
AR-P 6200.09 (CSAR)
AZ 4562

The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.

Training video

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager

Process information

Equipment performance and process related parameters

Purpose		HMDS priming Spin coating of anisole based E-beam resists Spin coating of PGMEA based UV resists Soft baking Edge bead removal (CSAR and novolac-based UV resists)
Resist		AR-P 6200.09 (CSAR) AZ 5214E AZ MiR 701 (29cps) AZ 4562 30cc syringe dispense
Performance	HMDS contact angle	60 - 80° (on Silicon)
Performance	Coating thickness	AR-P 6200.09 (CSAR): 170-500 nm AZ 5214E: 1.5-5 µm AZ MiR 701: 1.5-4 µm AZ 4562: 5-25 µm
Process parameters	Priming temperature	120 °C
	Spin speed	10 - 6000 rpm
	Spin acceleration	10 - 10000 rpm/s
	Hotplate temperature	25 - 200 °C
	Cool plate temperature	21 °C
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	Silicon, III-V, and glass Resists and crystalbond are not allowed in the HMDS module
	Batch	1 - 25