Specific Process Knowledge/Lithography/Strip
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Strip Comparison Table
Equipment | Plasma asher | Plasma Asher 2 | III-V Plasma Asher | Resist strip | Lift-off | |
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Purpose |
All purposes |
Clean wafers only, no metal |
III-V materials only |
Resist strip, no metal lift off |
Lift-off | |
Method |
Plasma ashing |
Plasma ashing |
Plasma ashing |
Solvent and ultra sound |
Solvent and ultra sound | |
Process parameters | Process gasses |
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Max. process power |
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Solvent |
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Substrates | Batch size |
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Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all but Type IV |
No metal! Silicon, glass, and polymer substrates Film or pattern of photoresist/polymer |
Silicon, III-V, and glass substrates Film or pattern of all but Type IV |
No metal! Silicon, glass, and polymer substrates Film or pattern of photoresist/polymer |
Silicon and glass substrates Film or pattern of all but Type IV |
Plasma ashing
Photoresist stripping | Descum after lithography | Surface treatment of plastic, ceramic and metal | Ashing of organic material | |
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Process pressure | 0.8- 1.2mbar | 0.5- 1.0mbar | 0.5- 1.0mbar | 0.8-1.5mbar |
Process gases |
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O2, CF4, N2 or their mixtures | O2 |
Process power | 600-1000W | 150-300W | 150-300W | 1000W or less for heat- sensitive materials |
Process time | 5-60 minutes | 1-5 minutes | a few seconds to a few minutes | Between 0.5 and 20 hours, depending on the material |
Batch size | 1-30 | 1-10 | 1 wafer at a time | 1 wafer at a time, use a container, e.g Petri dish |
A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210 ml O/min or mixture of 210 ml O/min and 70 ml N/min, power 1000 W.
A Descum process in manual mode: O2: 70 sccm, N2: 70 sccm, power: 150 W, time: 10 min. Be sure to wait for cooling if the machine has been used at 1000W right before. At a load at 2 Fused silica wafers resist removed 0.01-01,5 um
Plasma asher
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The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:
- Photoresist stripping
- Descumming
- Surface cleaning after storage
- Surface cleaning after processes using oil pump or diffusion pump vacuum
- Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
- Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
- Removal of organic passivating layers and masks
- Etching of glass and ceramic
- Etching of SiO, SiN, Si
- Removal of polyimide layers
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
The user manual, user APV, and contact information can be found in LabManager
Process Information
Plasma Asher 2
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The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
The typical process parameters when operating the equipment:
- Photeresist stripping
Pressure: 0.8 - 1.0 mbar
Gas: O2
Power: 600 - 1000 watts
Time: 5 -30 min., depending on photoresist type and thickness
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.
A Descum process in manual mode: O2:70, N2:70, power:150W, time:10min
Be sure to wait for cooling if the mashine has been used at 1000W right before. At a load at 2 Fused silicawafers resist removed 0.01-01,5um
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in LabManager
Process Information
III-V Plasma Asher
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Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in LabManager
Resist Strip
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This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
Here are the main rules for resist strip use:
- Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
- After the strip rinse your wafers in the IPA bath for 2-3 min.
- Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: Resist Strip
Overview of wet bench 06 and 07
Resist strip | Lift-off | |
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General description |
wet stripping of resist |
lift-off process |
Chemical solution | NMP Remover 1165 | NMP Remover 1165 |
Process temperature | Up to 60 oC | Up to 60 oC |
Batch size |
1-25 wafers at a time |
1-25 wafer at a time |
Size of substrate |
4" wafers 6" wafers |
4" wafers 6" wafers |
Allowed materials |
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