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Specific Process Knowledge/Lithography/Strip: Difference between revisions

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*NMP (Remover 1165)
*NMP (Remover 1165)
*IPA (rinsing agent)
*IPA (rinsing agent)
|-
! scope=row style="text-align: left;" | Process temperature
| Up to ~100°C
| Up to ~100°C
| Up to ~100°C
| Up to ~65°C
| Up to ~65°C
|-
|-
! scope=row style="text-align: left;" | Process time
! scope=row style="text-align: left;" | Process time
Line 137: Line 144:
|
|
*Silicon substrates
*Silicon substrates
*III-V substrates
*III-V substrates (only on Si carrier)
*Glass substrates
*Glass substrates
*Polymer substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No iron (Fe) containing films'''</span>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*Silicon substrates
*III-V substrates
*III-V substrates
*Glass substrates
*Glass substrates
*Polymer substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span>
*Silicon substrates
*Silicon substrates
*III-V substrates (only if clean)
*III-V substrates (only if clean)
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|}
|}
<br clear="all" />
<br clear="all" />
<!--
= Plasma Ashing process parameters=
{| class="wikitable"
|-
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
|-
! scope=row style="text-align: left;" | Tool
| Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
|-
! scope=row style="text-align: left;" | Process pressure
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|-
! scope=row style="text-align: left;" | Process gasses
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
! scope=row style="text-align: left;" | Process power
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|-
! scope=row style="text-align: left;" | Process time
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
|}
<br clear="all" />
-->
<!--
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
-->
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}


=Decommisioned tools=
=Decommisioned tools=

Revision as of 10:41, 24 June 2026

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Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process pressure 0.8 mbar 0.5-1.5 mbar 0.5-1.5 mbar NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Process temperature Up to ~100°C Up to ~100°C Up to ~100°C Up to ~65°C Up to ~65°C
Process time 1-10 minutes
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only on Si carrier)
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) containing films
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) or Copper (Cu) containing films
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)


Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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