Beaker development, in fume hood 09: UV development or fume hood 10: e-beam development, is a fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools. We always recommend using, or at least trying, the automatic and semi-automatic tools, instead of using manual beaker development.
Manual beaker development is necessary for some processes, but should be avoided if possible, due to the fact that it is notoriously difficult to get a stable repeatable process - especially when multiple users are sharing the same process; everybody simply does things a bit different from each other, which leads to changes in the process outcome. Some processes have a very narrow process window, which makes them inherently sensitive to small changes in the development. The manual development also has a much greater chance of producing particles, both from the operator and the environment.
Finally the safety of the operator is at a significantly higher risk, since any manual handling of chemicals carries the risk of accidental spills with it. This is especially problematic if the developer is TMAH based, where direct skin exposure of >1% TMAH on a few percent of the body must be treated as a life-threatening event.
===Special rules for manual beaker development of TMAH===
*Automatic agitation methods are not allowed - this includes magnetic stirring or sonication
*Manual agitation methods, which create large waves or turbulence in the development solution, are not allowed
*Users must submit a risk assessment for any process requiring manual beaker development of TMAH based developers
*Users requiring manual beaker development of TMAH based developers must additionally provide valid reasons for not using the already available automatic and semi-automatic tools
===Standard manual beaker development procedure===
[[File:Beaker_development_v1.png|600px|thumb|Standard procedure for manual beaker development in fume hood:<br>1) Submerge exposed substrate into development solution<br>2) When timer ends, move substrate directly into Rinse 1<br>3) After a few seconds, move substrate into Rinse 2*<br>4) Remove developed substrate for drying<br>(*It is allowed to omit the Rinse 2 step)|right]]
The standard procedure for manual beaker development in a fume hood is as follows:
#Prepare development process
#Perform development
#Clean up
'''Prepare development process'''
*Write the chemical label, which must always be present in your chemical setup - your write your label <i>before</i> pouring the chemical
*Find the beakers required for your process
*Find the items required for holding/submerging your substrate during the process
*Find carriers or other storage units for placing your substrate after the process has finished
*Find a timer - make sure it works as you expect it to, before submerging your substrate into the development solution and discovering that the timer is in fact broken
*Get some cleanroom wipes and keep them nearby, for wiping any drops spilled during handling
*<span style="color:red">Do not cover too many of the exhaust holes in the fume hood table, as this will reduce the efficiency of the exhaust, which reduces safety</span>
*<span style="color:red">Do not place your beakers too close to the fume hood sash, as this can make it difficult to efficiently extract the fumes escaping from the beakers, which reduces safety</span>
'''Perform development'''
{{:Specific Process Knowledge/Lithography/Development/beaker_developer}}
#Put on the appropriate personal protection gear
#Pour rinsing agent into Rinse 1 and Rinse 2 beakers - typically DI water or IPA
#Pour development solution into development beaker
#Place exposed substrate in the appropriate carrier
#Set timer
#Submerge substrate into development beaker
#Start timer immediately
#When timer is 5 seconds from ending, prepare to lift the substrate out of the development beaker
#Lift substrate out of development beaker - it can help to lift it at a slight angle, to allow liquids to drain more easily from large surfaces
#Submerge it immediately into Rinse 1
#Agitate up/down for at least a few seconds
#Move substrate into Rinse 2*
#Agitate slightly
#The developed substrate can now be removed and dried
(<nowiki>*</nowiki>It is allowed to omit the Rinse 2 step)
{{:Specific Process Knowledge/Lithography/Development/SU8_developer}}
'''Clean up'''
{{:Specific Process Knowledge/Lithography/Development/manualEbeam_developer}}
*Pour Rinse 1 and Rinse 2 into appropriate waste: water goes into the sink, IPA goes into C-waste drain
*Rinse beakers with the DI-water gun
*Pour development solution into appropriate waste: solvent based developer goes into C-waste drain. <span style="color:red">NB! TMAH is an aqueous alkaline solution, which must never be mixed with solvents! TMAH waste goes into the dedicated TMAH waste container, stored in the chemical cabinet in E-4.</span>
*If your developer solution is not TMAH based:
**Rinse beaker 3 times, discard water into sink
*If your developer solution is TMAH based:
**Rinse beaker once with DI-water and discard this into the TMAH waste
**Rinse beaker two more times, discarding the water into the sink
*Hang all beakers to dry on the drying rack
*Erase the chemical label text
*Wipe any droplets on the fume hood surface
*Discard any napkins/other trash in the bin inside the fume hood
<br clear="all" />
{{:Specific Process Knowledge/Lithography/Development/manualTMAH_developer}}
==Developer: SU8 (Wet Bench)==
{{:Specific Process Knowledge/Lithography/Development/UV_developer}}
[[Image:SU8dev.JPG|400px|right|thumb|The Developer: SU8 (Wet Bench) is located in E-4.]]
The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA in dedicated IPA bath and put for drying in the empty bath.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login'''
===Process information===
Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.
Development time is strongly dependent on the SU-8 thickness.
*Minimum development time: 1 min per 20 µm in FIRST
Suggestions:
*2-5µm: 2 min. in FIRST; 2 min. in FINAL
*40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
*180-250µm: 15 min. in FIRST; 15 min. in FINAL
=== Equipment performance and process related parameters ===
*Film, or pattern, of all materials except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
1-6
|-
|}
<br clear="all" />
==Developer: E-beam 02==
[[Image:IMG 2464.JPG|400px|right|thumb|Developer: E-beam 02 is located in E-4.]]
Developer: E-beam 02 is a manually operated, single substrate puddle developer. It uses the ZED-N50 or AR 600-50 developers and IPA for rinsing. The substrates are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is then performed automatically by the equipment.
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]''' (for Developer: TMAH Manual, but it is the same model)
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager] - '''requires login'''
===Process information===
All recipes use the following structure:
#Pressurize the developer canister
#Dispense puddle while rotating substrate slowly
#Puddle development while not rotating
#Agitate substrate once per 15 seconds by rotating slowly for 1 second
#Spin off developer
#Clean substrate with IPA
#Dry substrate and chamber with nitrogen
Multi-puddle recipes repeat steps 2-5 for the given number of puddles.
'''Process recipes'''<br>
N50 recipes have the letter "N" in them. AR-600-50 recipes have the letter "A" in them. The number is the development time in seconds:
*01 Rinse
*02 N 15
*03 N 30
*04 N 60
*05 N 90
*06 N 120
*07 N 180
*08 N 300
*09 N 600
*10 N 2x60
*11 N 5x60
*12 A 15
*13 A 30
*14 A 60
*15 A 90
*16 A 120
*17 A 180
*18 A 300
*19 A 600
*20 A 2x60
*21 A 5x60
=== Equipment performance and process related parameters ===
[[Image:IMG 2464.JPG|400px|right|thumb|Developer: TMAH Manual 02 is located in E-4.]]
Developer: TMAH Manual 02 is a manually operated puddle developer for single wafers or chips. The wafers or chips are loaded manually one by one into the developer, but the developer dispense, puddle time, water rinse, and drying is performed automatically.
The development uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent).
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]'''
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager] - '''requires login'''
===Process information===
All recipes use the following structure:
#Pressurize the TMAH canister
#Dispense puddle while rotating substrate slowly
#Puddle development with agitation of substrate
#Spin off developer
#Clean substrate and chamber with DI water
#Dry substrate and chamber with nitrogen
Multipuddle recipes repeat steps 2-4 for the given number of puddles.
'''Process recipes'''<br>
(Updated 2026-01-12, JEHEM)
*-Rinse-
*1x015s
*1x030s
*1x060s
*1x120s
*2x060s
*5x060s
=== Equipment performance and process related parameters ===
[[Image:SUSS DEV.JPG|400px|right|thumb|Developer: TMAH UV-lithography is located in E-4.]]
Developer TMAH UV-lithography was released Q4 2014.
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|developer chuck size and hotplate pin positions]].
'''[https://www.youtube.com/watch?v=fs9DRH0Eo3k Training video]'''
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=329 LabManager] - '''requires login'''
===[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing|Process Information]]===
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing#General_Process_Information|General process information]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]
=== Equipment performance and process related parameters ===
Fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools
Requires individual risk assessment for TMAH development!
Development of:
SU-8
Development of:
ZEP 520A
AR-P 6200.xx (CSAR)
Development of:
AZ nLOF
AZ MiR 701
AZ 5214E
AZ 4562
DUV resists
Development of:
AZ nLOF
AZ MiR 701
AZ 5214E
AZ 4562
DUV resists
Post-exposure baking
Development of:
DUV resists
Post-exposure baking
Developer
Process dependent
mr-Dev 600 (PGMEA)
ZED N-50
AR 600-50
AZ 726 MIF (2.38% TMAH in water)
AZ 726 MIF (2.38% TMAH in water)
AZ 726 MIF (2.38% TMAH in water)
Method
Submersion
Submersion
Puddle
Puddle
Puddle
Puddle
Handling
Manual handling in beakers
Chip bucket
Single wafer carrier
Carrier for up to 5 wafers
Chip bucket
Single wafer carrier
Carrier for up to 6 wafers
Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates
Chip chuck for chips & 50 mm substrates
Vacuum-free edge-grip chuck for 100 mm & 150 mm substrates
Chip chuck for chips & 50 mm substrates
Vacuum chuck
Vacuum chuck
Process temperature
Room temperature
Room temperature
Room temperature
Room temperature
Room temperature
Room temperature
Process agitation
No agitation allowed
Magnetic stirrer
Rotation
Rotation
Rotation
Rotation
Process rinse
Process dependent
IPA
IPA
DI water
DI water
DI water
Substrate size
Chips
50 mm wafers
100 mm wafers
150 mm wafers
Chips
50 mm wafers
100 mm wafers
150 mm wafers
200 mm wafers
Chips (5mm to 2")
50 mm wafers
100 mm wafers
150 mm wafers
200 mm wafers
Chips (5mm to 50 mm)
100 mm wafers
150 mm wafers
100 mm wafers
150 mm wafers
200 mm wafers (may require tool change)
100 mm wafers
150 mm wafers
200 mm wafers (may require tool change)
Allowed materials
All cleanroom approved materials
Silicon and glass substrates
Film or pattern of all but Type IV
All cleanroom approved materials
All cleanroom approved materials
Film or pattern of all types
Silicon and glass substrates
Films, or patterned films, of any material except type IV (Pb, Te)
Silicon, III-V, and glass substrates
Films, or patterned films, of any material except type IV (Pb, Te)
Batch size
1 - 5
1 - 6
1
1
1 - 25
1 - 25
Manual beaker development in fumehood
Beaker development, in fume hood 09: UV development or fume hood 10: e-beam development, is a fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools. We always recommend using, or at least trying, the automatic and semi-automatic tools, instead of using manual beaker development.
Manual beaker development is necessary for some processes, but should be avoided if possible, due to the fact that it is notoriously difficult to get a stable repeatable process - especially when multiple users are sharing the same process; everybody simply does things a bit different from each other, which leads to changes in the process outcome. Some processes have a very narrow process window, which makes them inherently sensitive to small changes in the development. The manual development also has a much greater chance of producing particles, both from the operator and the environment.
Finally the safety of the operator is at a significantly higher risk, since any manual handling of chemicals carries the risk of accidental spills with it. This is especially problematic if the developer is TMAH based, where direct skin exposure of >1% TMAH on a few percent of the body must be treated as a life-threatening event.
Special rules for manual beaker development of TMAH
Automatic agitation methods are not allowed - this includes magnetic stirring or sonication
Manual agitation methods, which create large waves or turbulence in the development solution, are not allowed
Users must submit a risk assessment for any process requiring manual beaker development of TMAH based developers
Users requiring manual beaker development of TMAH based developers must additionally provide valid reasons for not using the already available automatic and semi-automatic tools
Standard manual beaker development procedure
Standard procedure for manual beaker development in fume hood: 1) Submerge exposed substrate into development solution 2) When timer ends, move substrate directly into Rinse 1 3) After a few seconds, move substrate into Rinse 2* 4) Remove developed substrate for drying (*It is allowed to omit the Rinse 2 step)
The standard procedure for manual beaker development in a fume hood is as follows:
Prepare development process
Perform development
Clean up
Prepare development process
Write the chemical label, which must always be present in your chemical setup - your write your label before pouring the chemical
Find the beakers required for your process
Find the items required for holding/submerging your substrate during the process
Find carriers or other storage units for placing your substrate after the process has finished
Find a timer - make sure it works as you expect it to, before submerging your substrate into the development solution and discovering that the timer is in fact broken
Get some cleanroom wipes and keep them nearby, for wiping any drops spilled during handling
Do not cover too many of the exhaust holes in the fume hood table, as this will reduce the efficiency of the exhaust, which reduces safety
Do not place your beakers too close to the fume hood sash, as this can make it difficult to efficiently extract the fumes escaping from the beakers, which reduces safety
Perform development
Put on the appropriate personal protection gear
Pour rinsing agent into Rinse 1 and Rinse 2 beakers - typically DI water or IPA
Pour development solution into development beaker
Place exposed substrate in the appropriate carrier
Set timer
Submerge substrate into development beaker
Start timer immediately
When timer is 5 seconds from ending, prepare to lift the substrate out of the development beaker
Lift substrate out of development beaker - it can help to lift it at a slight angle, to allow liquids to drain more easily from large surfaces
Submerge it immediately into Rinse 1
Agitate up/down for at least a few seconds
Move substrate into Rinse 2*
Agitate slightly
The developed substrate can now be removed and dried
(*It is allowed to omit the Rinse 2 step)
Clean up
Pour Rinse 1 and Rinse 2 into appropriate waste: water goes into the sink, IPA goes into C-waste drain
Rinse beakers with the DI-water gun
Pour development solution into appropriate waste: solvent based developer goes into C-waste drain. NB! TMAH is an aqueous alkaline solution, which must never be mixed with solvents! TMAH waste goes into the dedicated TMAH waste container, stored in the chemical cabinet in E-4.
If your developer solution is not TMAH based:
Rinse beaker 3 times, discard water into sink
If your developer solution is TMAH based:
Rinse beaker once with DI-water and discard this into the TMAH waste
Rinse beaker two more times, discarding the water into the sink
Hang all beakers to dry on the drying rack
Erase the chemical label text
Wipe any droplets on the fume hood surface
Discard any napkins/other trash in the bin inside the fume hood
Developer: SU8 (Wet Bench)
The Developer: SU8 (Wet Bench) is located in E-4.
Tool description
The Developer: SU-8 (wet bench) is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as the product mr-Dev 600).
The SU-8 development is a three-stage process:
Submerge into "FIRST" bath to dissolve the bulk of the resist
Submerge into "FINAL" bath to finish the development
Submerge into "RINSE" bath to stop the development process and rinse the substrates
The development time is controlled manually by the user. After development the substrates are dried in the empty bath, which is dedicated for drying.
Product:
Arias wet bench
Year of purchase:
2023
Location:
Cleanroom E-4
User manual
The user manual and contact information can be found in LabManager - requires login
Tool training
Training on the tool requires users to complete the lithography TPT followed by online tool training and hands-on authorization training.
Equipment performance and process related parameters
Tool purpose
Development of:
SU-8
Developer
mr-Dev 600 (PGMEA)
Development method
Submersion
Handling method
Multi- or single wafer holder
Process temperature
Room temperature
Process agitaion
Magnetic stirrer
Process rinse
IPA
Substrate sizes
Chips
50 mm wafers
100 mm wafers
150 mm wafers, check the liquid level in the baths
200 mm wafer, check the liquid level in the baths
Substrate materials
Silicon and glass substrates
Film, or pattern, of all materials except Type IV
Substrate batch size
1-6
Process information
Several aspects of the SU-8 processing outcome are affected by the development process:
The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature
Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worse in a fresh developer bath. This effect of the developer quickly saturates after developing 5-10 wafers
The stability of fine structures (high aspect ratio structures) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying
Development time
Development time is strongly dependent on the SU-8 thickness:
Minimum development time: 1 min per 20 µm in FIRST bath
Maximum development time: SU-8 is not very sensitive to over-development
Recommendations for development time:
≤5 µm: 2 minutes in FIRST bath, followed by 2 minutes in FINAL bath
~40 µm: 5 minutes in FIRST bath, followed by 5 minutes in FINAL bath
≥180 µm: 15 minutes in FIRST bath, followed by 15 minutes in FINAL bath
Developer: E-beam 02
Developer: E-beam 02 is located in E-4.
Tool description
The Developer: E-beam 02 is a semi-automatic and programmable single substrate developer system, which can be used for development of resists on chips, 50 mm, 100 mm, 150 mm and 200 mm substrates. The development is done using ZED-N50 or AR 600-50 developers and IPA for rinsing.
Single substrates are loaded manually into the tool, but the developer dispense, puddle time, agitation, rinse and drying is controlled by the tool.
Product:
Laurell EDC-650Hz-8NPPB-IND
Year of purchase:
2024
Location:
Cleanroom E-4
User manual
The user manual and contact information can be found in LabManager - requires login
Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
The tool training video is part of the online tool training, but can also be viewed here (the video is for Developer: TMAH Manual 02, but the two tools are almost identical).
Equipment performance and process related parameters
Tool purpose
Development of:
AR-P 6200.xx (CSAR)
ZEP 520
Other E-beam resists
Developer
AR 600-50
ZED N-50
Development method
Puddle
Handling method
Non-vacuum chuck for 200 mm wafers
Non-vacuum chuck for 100 mm & 150 mm wafers
Non-vacuum chuck for 50 mm wafers
Non-vacuum chuck for chips
Process temperature
Room temperature
Process agitaion
4 cycles per minute
Process rinse
IPA
Substrate sizes
Chips
50 mm wafers
100 mm wafers
150 mm wafers
200 mm wafers
Substrate materials
All cleanroom allowed materials
Film, or pattern, of all materials except Type IV
Substrate batch size
1
Process information
All recipes use the following structure:
Pressurize the developer canister
Dispense puddle while rotating substrate slowly
Puddle development with/without agitation of substrate
Spin off developer
Clean substrate with IPA
Dry substrate and chamber with nitrogen
Multi puddle
Multi puddle recipes repeat steps 2-4 for the given number of puddles.
Process recipes
(Updated 2026-01-14, JEHEM)
N50 recipes have the letter "N" in them. AR-600-50 recipes have the letter "A" in them. The number is the development time in seconds:
01 Rinse
02 N 15
03 N 30
04 N 60
05 N 90
06 N 120
07 N 180
08 N 300
09 N 600
10 N 2x60
11 N 5x60
12 A 15
13 A 30
14 A 60
15 A 90
16 A 120
17 A 180
18 A 300
19 A 600
20 A 2x60
21 A 5x60
30 N 3x60s
NILT AR
NILT MOE
NILT p30
NILT p31
NILT p32
Agitation
4 cycles per minute, 30 rpm, 30 rpm/s.
Developer: TMAH Manual 02
Developer: TMAH Manual 02 is located in E-4.
Tool description
The Developer: TMAH manual 02 is a semi-automatic and programmable single substrate developer system, which can be used for development of resists on chips, 50 mm, 100 mm and 150 mm substrates. The development is done using AZ 726 MIF, which is a 2.38% TMAH solution with wetting agent.
Single substrates are loaded manually into the tool, but the developer dispense, puddle time, agitation, rinse and drying is controlled by the tool.
Product
Laurell EDC-650-HZB-23NP
Year of purchase
2016
Tool modification
Converted from e-beam solvent developer to UV TMAH developer in 2024
Added media flow controllers for developer, rinse and drying media in 2025
Location
Cleanroom E-4
User manual
The user manual and contact information can be found in LabManager - requires login
Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
The tool training video is part of the online tool training, but can also be viewed here.
Equipment performance and process related parameters
Tool purpose
Development of UV resists:
AZ nLOF 2020
AZ MIR 701
AZ 5214E
AZ 4562
Development of DUV resists:
KrF M230Y
KrF M35G
Developer
AZ 726 MIF (2.38% TMAH)
Development method
Puddle
Handling method
Non-vacuum chuck for 100 mm & 150 mm wafers
Non-vacuum chuck for chips and 50 mm wafers
Process temperature
Room temperature
Process agitaion
15 cycles per minute
Process rinse
DI water
Substrate sizes
Chips
50 mm wafers
100 mm wafers
150 mm wafers
Substrate materials
All cleanroom allowed materials
Film, or pattern, of all materials except Type IV
Substrate batch size
1
Process information
All recipes use the following structure:
Pressurize the TMAH canister
Dispense puddle while rotating substrate slowly
Puddle development with agitation of substrate
Spin off developer
Clean substrate and chamber with DI water
Dry substrate and chamber with nitrogen
Multi puddle
Multi puddle recipes repeat steps 2-4 for the given number of puddles.
Process recipes
(Updated 2026-01-12, JEHEM)
-Rinse-
1x015s
1x030s
1x060s
1x120s
2x060s
5x060s
Agitation
Testing showed that adding agitation to the puddle step gave better uniformity in the development rate over the entire area of the substrate as well as increased development rate.
Tests were performed on under-exposed resist, specifically for showing the difference between the agitation and non-agitation puddle development - the measured results cannot necessarily be transferred directly to a working process, only the vague general behavior of the two process setups; faster/slower development speed and better/worse uniformity across substrate.
Development rate for under-exposed resist testNon-uniformity for under-exposed resist test
Non-agitation
Agitation
Test results
Slower development
Worse uniformity
Faster development
Better uniformity
Normalized development rate
1
1.20
Non-uniformity
21%
11%
Agitation
None
15 cycles per minute, 20 rpm, 500 rpm/s
Substrate
100 mm SSP silicon
Resist film
1.5 µm AZ 5214E
Exposure dose
50 mJ/cm2 (~50% of normal dose)
Development
Single puddle for 60 seconds
Developer
AZ 726 MIF (2.38% TMAH)
Developer TMAH UV-lithography
Developer: TMAH UV-lithography is located in E-4.
Developer TMAH UV-lithography was released Q4 2014.
Equipment performance and process related parameters
Purpose
Development of
AZ nLOF
AZ MiR 701
AZ 5214E
AZ 4562
DUV resists
Developer
AZ 726 MIF
(2.38% TMAH in water)
Method
Development
Puddle
Handling
Vacuum chuck
Process parameters
Temperature
Room temperature
Agitation
Rotation
Rinse
DI water
Substrates
Substrate size
100 mm wafers
150 mm wafers
Allowed materials
Silicon and glass substrates
Film or pattern of all except Type IV
Batch
1-25
Developer: TMAH Stepper
The Developer-TMAH-Stepper is placed in F-3.
This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.
The user manual and contact information can be found in LabManager - requires login
Process information
The SEM picture of 250 nm pillars and lines. Exposure dose is 140 J/m2.
The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
Here you can find a chart demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.
.jpg)