Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]] | [[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]] | ||
DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace. The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4" wafers at a time. | DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)". The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4" wafers at a time. | ||
TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube). | TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube). | ||