Specific Process Knowledge/Lithography/Strip: Difference between revisions
| Line 269: | Line 269: | ||
<br clear="all" /> | <br clear="all" /> | ||
==Process power== | ==Process power for plasma asher 4 & 5== | ||
<!--[[File:PA_flowRate_v1.png|320px|thumb|Ashing rate as function of total gas flow rate.|right]]--> | <!--[[File:PA_flowRate_v1.png|320px|thumb|Ashing rate as function of total gas flow rate.|right]]--> | ||
The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | ||