Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process gas flow rate== | ==Process gas flow rate== | ||
[[File:PA_flowRate_v1.png|320px|thumb|Ashing rate as function of total gas flow rate.|right]] | |||
The ashing rate is related to the total gas flow rate during processing. | |||
Test using a single 100 mm wafer in the center of the process chamber shows that a total flow rate of 200 sccm gives the highest ashing rate. | |||
<b>Test parameters:</b><br> | |||
Total gas flow rate: set to tested flow rates<br> | |||
Gas mix ratio: 30% nitrogen<br> | |||
DSC: 1.3 mbar<br> | |||
Chamber pressure: 1.3 mbar<br> | |||
Power: 1000 W<br> | |||
Processing time: 2 minutes<br> | |||
Temperature (average): 43°C | |||
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==Process power== | ==Process power== | ||