Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process chamber pressure== | ==Process chamber pressure== | ||
[[File:PA_chamber_pressure_v1.png|320px|thumb|Ashing rate as function of chamber pressure.|right]] | |||
The ashing rate is related to the chamber pressure during processing. | |||
Test using a single 100 mm wafer in the center of the process chamber shows that a chamber pressure of 1.3 mbar gives the highest ashing rate. | |||
<b>Test parameters:</b><br> | |||
Total gas flow rate: 150 sccm<br> | |||
Gas mix ratio: 30% nitrogen<br> | |||
DSC: set to test pressures<br> | |||
Chamber pressure: set to test pressures<br> | |||
Power: 1000 W<br> | |||
Processing time: 2 minutes<br> | |||
Temperature (average): 43°C | |||
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==Process gas flow rate== | ==Process gas flow rate== | ||