Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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''All contents by DTU Nanolab staff.'' | ''All contents by DTU Nanolab staff.'' | ||
Silicon Oxide can be '''deposited''' here at DTU Nanolab by LPCVD, PECVD, sputtering, or e-beam evaporation. In our cleanroom it is also possible to '''grow''' silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace. | |||
==Deposition of Silicon Oxide using LPCVD== | ==Deposition of Silicon Oxide using LPCVD== | ||
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==Deposition of Silicon Oxide using PECVD== | ==Deposition of Silicon Oxide using PECVD== | ||
PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 | PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 °C. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used, e.g., as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, which is not allowed in the LPCVD and in PECVD4. | ||
*[[/Deposition of Silicon Oxide using PECVD|Deposition of Silicon Oxide using PECVD]] | *[[/Deposition of Silicon Oxide using PECVD|Deposition of Silicon Oxide using PECVD]] | ||
==Deposition of Silicon Oxide using sputter deposition== | ==Deposition of Silicon Oxide using sputter deposition== | ||
At DTU Nanolab | At DTU Nanolab we sputter silicon oxide in the Sputter-System [[Specific Process Knowledge/Thin film deposition/Lesker|(Lesker)]] or the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal Oxide(PC1)]]. An advantage of sputtering is that you can deposit on many kinds of material. | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1)|Reactively Sputtered Silicon Oxide in Sputter-System Metal Oxide (PC1)]] | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1)|Reactively Sputtered Silicon Oxide in Sputter-System Metal Oxide (PC1)]] | ||
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*Almost any that will not degas and is not very poisonous | *Almost any that will not degas and is not very poisonous | ||
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet] | *See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet] | ||
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*Almost any that will not degas and is not very poisonous | *Almost any that will not degas and is not very poisonous | ||
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet] | *See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet] | ||
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*Acids react with a number of metals to produce hydrogen which, in contact with the air, may cause explosions | *Acids react with a number of metals to produce hydrogen which, in contact with the air, may cause explosions | ||