Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point. | Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point. | ||
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==Wet SiO2 growth == | ==Wet SiO2 growth == | ||
[https://labmanager.dtu.dk/view_binary.php?class=ChemicalProcess&id=118&name=Updated_APV_Wet_SiO2-growth_using_HNO3+%281%29.docx '''Link to | [https://labmanager.dtu.dk/view_binary.php?class=ChemicalProcess&id=118&name=Updated_APV_Wet_SiO2-growth_using_HNO3+%281%29.docx '''Link to risk assessment and procedure in Labmanager (password needed)'''] | ||
Wet SiO2 growth using hot HNO3. | Wet SiO2 growth using hot HNO3. | ||