Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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== InP etch with Cl2/H2 and a Si carrier wafer (2019) == | == InP etch with Cl2/H2 and a Si carrier wafer (2019) == | ||
''Work done by Berit Herstrøm @Nanolab spring 2019'' | ''Work done by Berit Herstrøm @Nanolab spring 2019'' | ||
*Sidewall passivation assisted by a silicon coverplate during and HBr | <br> | ||
inductively coupled plasma etching of InP for photonic devices | This work was done with great inspiration from the following articles: | ||
S. Bouchoule, G. Patriarche, S. Guilet, L. Gatilova, L. Largeau, and P. Chabert | *Sidewall passivation assisted by a silicon coverplate during and HBr inductively coupled plasma etching of InP for photonic devices ''by S. Bouchoule, G. Patriarche, S. Guilet, L. Gatilova, L. Largeau, and P. Chabert'', Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26, 666 (2008); doi: 10.1116/1.289845 | ||
Measurement, and Phenomena 26, 666 (2008); doi: 10.1116/1.289845 | |||
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