Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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Done in fume hood 1 or 2 in D-3. Growth rate is 1,5 - 2 nm on 10 min | Done in fume hood 1 or 2 in D-3. Growth rate is 1,5 - 2 nm on 10 min | ||
'''Training and risk assessment always needed''' | |||
==Comparison of the methods for deposition of Silicon Oxide== | ==Comparison of the methods for deposition of Silicon Oxide== | ||