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Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,370 edits
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*TiO<sub>2</sub> (amorphous or anatase)
*TiO<sub>2</sub> (amorphous or anatase)
*HfO<sub>2</sub>
*HfO<sub>2</sub>
*ZnO
*AZO (Al-doped ZnO)
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
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*Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on temperature)  
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on temperature)  
*TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on temperature)  
*TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on temperature)  
*ZnO: 0.11 - 0.18 nm/cycle (Using ZnOT recipe, depending on temperature)
*HfO<sub>2</sub>: 0.0827 nm/cycle
*HfO<sub>2</sub>: 0.0827 nm/cycle
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