Specific Process Knowledge/Lithography/SU-8: Difference between revisions
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SU-8 is an epoxy based negative i-line photoresist with a high contrast. More then 10:1 aspect ratio imaging with vertical sidewalls is one of the widely used properties of this resist. It also has high chemical, plasma and temperature resistance after curing which makes it well suited for permanent use applications. | SU-8 is an epoxy based negative i-line photoresist with a high contrast. More then 10:1 aspect ratio imaging with vertical sidewalls is one of the widely used properties of this resist. It also has high chemical, plasma and temperature resistance after curing which makes it well suited for permanent use applications. | ||
<span style="color:red">'''Note:''' Since the SU-8 is epoxy-based, the user is required to take the mandatory epoxy course "Personlig sikkerhed ved arbejde med epoxy". Registration to this course can be found on Portalen under: [https://www.inside.dtu.dk/en/medarbejder/hr-og-arbejdsmiljoe/kompetenceudvikling/kursusoversigt_overside/kursusoversigt/arbejdsmiljoe-og-beredskabskurser/epoxy-kursus?fs=1 Arbejdsmiljø kurser]</span> | |||
In the cleanroom the SU-8 2000 product line is widely used, where the '''SU-8 2005''', '''SU-8 2035''', and '''SU-8 2075''' are supplied by Nanolab. Other | In the cleanroom the SU-8 2000 product line is widely used, where the '''SU-8 2005''', '''SU-8 2035''', and '''SU-8 2075''' are supplied by Nanolab. Other resist formulations can be used, but has to be ordered by the user. | ||
Process recommendations: | '''Process recommendations:''' | ||
* a standard process consist of spinning, soft bake, exposure, post-exposure bake and development. Please notice that the entire process must be done continuously, meaning that it is not recommendable to spin the resist and then wait until the next day before exposing | * a standard process consist of spinning, soft bake, exposure, post-exposure bake and development. Please notice that the entire process must be done continuously, meaning that it is not recommendable to spin the resist and then wait until the next day before exposing | ||
* exposure using radiation above 350 nm is recommended | * exposure using radiation above 350 nm is recommended | ||
* Controlled soft and post-exposure bakes are recommended and must be optimized for the specific application, but baseline parameters which can be used as a starting point will be given | * Controlled soft and post-exposure bakes are recommended and must be optimized for the specific application, but baseline parameters which can be used as a starting point will be given | ||
You can also take a look at a Ph.D thesis on the topic that you can find in Process2Share: http://process2share.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Photolithography/SU8#Reports] | You can also take a look at a Ph.D thesis on the topic that you can find in Process2Share: http://process2share.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Photolithography/SU8#Reports] | ||