Specific Process Knowledge/Lithography/Development

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Development Comparison Table

Equipment		SU8-Developer	Developer: E-beam	Developer: TMAH Manual	Developer: TMAH UV-lithography	Developer: TMAH Stepper
Purpose		Development of: SU-8	Development of: ZEP 520A AR-P 6200.xx (CSAR)	Development of: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists	Development of: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists Post-exposure baking	Development of: DUV resists Post-exposure baking
Developer		mr-Dev 600 (PGMEA)	ZED N-50 AR-600-546	AZ 726 MIF (2.38% TMAH in water)	AZ 726 MIF (2.38% TMAH in water)	AZ 726 MIF (2.38% TMAH in water)
Method	Development	Submersion	Spray/Puddle	Spray/Puddle	Puddle	Puddle
	Handling	Single wafer carrier	Vacuum chuck for 100 mm & 150 mm substrates Chip chuck for chips & 2" substrates	Vacuum chuck for 100 mm & 150 mm substrates Chip chuck for chips & 2" substrates	Vacuum chuck	Vacuum chuck
Process parameters	Temperature	Room temperature	Room temperature	Room temperature	Room temperature	Room temperature
	Agitation	Magnetic stirrer	Rotation	Rotation	Rotation	Rotation
	Rinse	IPA	IPA	DI water	DI water	DI water
Substrates	Substrate size	100 mm wafers	Chips (5mm to 2") 50 mm wafers 100 mm wafers 150 mm wafers	Chips (5mm to 2") 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers 200 mm wafers (may require tool change)	100 mm wafers 150 mm wafers 200 mm wafers (may require tool change)
	Allowed materials	Silicon and glass substrates Film or pattern of all but Type IV	All cleanroom approved materials	All cleanroom approved materials Film or pattern of all types	Silicon and glass substrates Film or pattern of all but Type IV	Silicon, III-V, and glass substrates Film or pattern of all but Type IV
	Batch	1 - 6	1	1	1 - 25	1 - 25

SU8-Developer

The SU8-Developer bench is located in C-1

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The SU8-Developer bench is a manually operated chemical bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA and dried in the bench.

The user manual, user APV, and contact information can be found in LabManager

Process information

Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.

Development time is strongly dependent on the SU-8 thickness.

• Minimum development time: 1 min per 20µm in FIRST

Suggestions:

• 2-5µm: 2 min. in FIRST; 2 min. in FINAL
• 40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
• 180-250µm: 15 min. in FIRST; 15 min. in FINAL

Equipment performance and process related parameters

Purpose		Development of: SU-8
Developer		mr-Dev 600 (PGMEA)
Method	Development	Submersion
	Handling	Single wafer holder
Process parameters	Temperature	Room temperature
	Agitation	Magnetic stirrer
	Rinse	IPA
Substrates	Substrate size	100 mm wafers 150 mm wafer is possible if the developer liquid level is high enough
	Allowed materials	Silicon and glass substrates Film, or pattern, of all materials except Type IV
	Batch	1-6

Developer: E-beam

Developer: E-beam is located in E-4

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Developer: E-beam is a manually operated, single substrate or chip spray-puddle developer. It uses the N50 or AR 600-546 developers and IPA for rinsing. The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is performed automatically by the equipment.

The machine is setup to agitate and be stationary to enhance the development uniformity - this is a ongoing process.

Training video (for Developer: TMAH Manual, but it is the same model)

The user manual, user APV, and contact information can be found in LabManager

Process information

All recipes are single puddle. N50 and 546 denotes the developer used (546 is short for AR 600- 546). The first step is pressurizing the canister so nothing will happen visually. Please watch if the developer and rinsing starts. If not try to restart the machine by pressing the EMO and turning it on again. The spray is 8-10 s and will start the development process hence the short recipes (10s and 30s.) have been adjusted according to this.

Process recipes

• 546 10s: 10s. Development Rinse and dry.
• 546 30s: 60s. Development Rinse and dry.
• 546 60s: 60s. Development Rinse and dry.
• 546 180s: 180s. Development Rinse and dry.
• N50 10s: 10s. Development Rinse and dry.
• N50 30s: 30s. Development Rinse and dry.
• N50 60s: 60s. Development Rinse and dry.
• N50 90s: 90s. Development Rinse and dry.
• N50 120s: 120s. Development Rinse and dry.
• N50 180s: 180s. Development Rinse and dry.
• N50 300s: 300s. Development Rinse and dry.
• N50 180s6": Test for changing the agitation for 6" uniformity 180s. Development Rinse and dry.
• Testdev: The time can be modified 60s. Development Rinse and dry on AR 600-546.
• Rinse: Rinse and dry.

Utility recipes

• UTIL-DR: Dome rinse.
• UTIL-BE: Bottle empty. Nanolab use only.

Equipment performance and process related parameters

Purpose		Development of: CSAR ZEP520A
Developer		AR 600 - 546 (developer X AR 600-54/6) used for CSAR 6200 series resists ZED N-50 used for Zep520A resists
Method	Development	Spray/Puddle
	Handling	Vacuum chuck for 100 mm or 150 mm wafers Chip chick for chips and 2" wafers
Process parameters	Temperature	Room temperature
	Agitation	Rotational agitation at 15 rpm
	Rinse	IPA
Substrates	Substrate size	Chips (6-60 mm) 2" wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom approved materials Film, or pattern, of all materials except Type IV
	Batch	1

Developer: TMAH Manual

Developer: TMAH Manual is located in E-4

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Developer: TMAH Manual is a manually operated, single substrate or chip spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment.

The spray nozzle makes it difficult to build up a perfect puddle on 4" or 6" substrates which affects the effectiveness and uniformity of the development. Pre-wetting during dispense or agitation during development may give better results.

Training video

The user manual, user APV, and contact information can be found in LabManager

Process information

Process recipes

• DP 2x60s: Double puddle, 2 times 60s. Rinse and dry.
• MP 4x60s: Multiple puddle, 4 times 60s. Rinse and dry.
• SP 120s: Single puddle, 120s. Rinse and dry.
• SP 15s: Single puddle, 15s. Rinse and dry.
• SP 30s: Single puddle, 30s. Rinse and dry.
• SP 60s: Single puddle, 60s. Rinse and dry.

Utility recipes

• UTIL-DR: Dome rinse.
• UTIL-BE: Bottle empty. Nanolab use only.

Equipment performance and process related parameters

Purpose		Development of: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists
Developer		AZ 726 MIF (2.38% TMAH in water)
Method	Development	Spray/Puddle
	Handling	Edge handling chuck for 100 mm and 150 mm wafers Vacuum chuck for 100 mm and 150 mm wafers Chip chuck for chips and 2" wafers
Process parameters	Temperature	Room temperature
	Agitation	none
	Rinse	DI water
Substrates	Substrate size	Chips (6-60 mm) 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom approved materials Film, or pattern, of all materials except Type IV
	Batch	1

Developer TMAH UV-lithography

Developer: TMAH UV-lithography is located in E-4

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Developer TMAH UV-lithography was released Q4 2014.

Training video

The user manual, user APV, and contact information can be found in LabManager

Process Information

• General process information
• Process recommendations
• Standard processes

Equipment performance and process related parameters

Purpose		Development of AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists
Developer		AZ 726 MIF (2.38% TMAH in water)
Method	Development	Puddle
	Handling	Vacuum chuck
Process parameters	Temperature	Room temperature
	Agitation	Rotation
	Rinse	DI water
Substrates	Substrate size	100 mm wafers 150 mm wafers
	Allowed materials	Silicon and glass substrates Film or pattern of all except Type IV
	Batch	1-25

Developer: TMAH Stepper

The Developer-TMAH-Stepper is placed in F-3

This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.

The user manual and contact information can be found in LabManager - requires login

Process information

The SEM picture of 250 nm pillars and lines. Exposure dose is 140 J/m2.

The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.

Here you can find a chart‎ demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.

Standard processes

Post-exposure bake sequences:

• (1000) DCH PEB 130C 60s 60s baking at 130°C; 20s cooling
• (1001) DCH PEB 130C 90s 90s baking at 130°C; 20s cooling

Development sequences:

• (1004) DCH DEV 60s 60s single puddle development

Combined PEB and development sequences:

• (1002) DCH PEB_60s and DEV_60s 60s baking at 130°C followed by 60s single puddle development
• (1003) DCH PEB_90s and DEV_60s 90s baking at 130°C followed by 60s single puddle development

The standard developer process consists of:

• pre-wetting with water (2.5s @ 1000rpm)
• developer dispense (2.5s @ 40rpm, corresponding to ~9ml)
• development (60s @ 0rpm)
• water rinse with BSR (5s @ 3000rpm)
• nitrogen drying (7s @ 4000rpm)

and has a cycle time of ~2 minutes

Equipment performance and process related parameters

Purpose		Development of DUV resist: KRF M230Y and KRF M35G
Developer		2,38% water based TMAH
Process parameters	Spin speed	10 - 5000 rpm
	Spin acceleration	100 - 10000 rpm/s
	Hotplate temperature	130°C for post exposure baking
Substrates	Substrate size	100 mm wafers 150 mm wafers 200 mm wafers (requires tool change)
	Allowed materials	Any standard cleanroom material
	Batch	1 - 25