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Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,893 edits
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*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*High Aspect Ratio Mode for exposure of thick resists
*High Aspect Ratio Mode for exposure of thick resists
*Upgrade to 8" (stage and exposure area)
*200 x 200 mm exposure field




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