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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS|LPCVD(TEOS)]]
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS|LPCVD(TEOS)]]
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
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!General description
!General description
|Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process.  
|Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process.  
|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature.
|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature
|Sputter deposition: can be done on top of a large range of materials. This system can only run in deposition mode in certain periods.
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials.  
|Sputter deposition: can be done on top of a large range of materials.  
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*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub>
*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub>
Can be doped with boron, phosphorus or germanium
Can be doped with boron, phosphorus or germanium
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*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used)
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|
*
*
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*~40 nm - 30 µm
*~40 nm - 30 µm
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*~10 nm - ~1 µm (>2h)
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* Thin layers (up to 200-300 nm)
* Thin layers (up to 200-300 nm)
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*300 °C
*300 °C
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*Expected to be below 100 °C
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*Room temp to 400 °C
*Room temp to 400 °C
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*Less good
*Less good
*When doped with phosphorus and/or Boron the oxide can float at about 1000 °C in a wet oxidation.
*When doped with phosphorus and/or Boron the oxide can float at about 1000 °C in a wet oxidation.
*Deposition on one side of the substrate
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*Not Known
*Deposition on one side of the substrate
*Deposition on one side of the substrate
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|
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*Less dense film
*Less dense film
*Incorporation of hydrogen in the film
*Incorporation of hydrogen in the film
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*
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*
*
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*1-3 100 mm wafers
*1-3 100 mm wafers
*1 150 mm wafer
*1 150 mm wafer
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*Several small samples mounted with capton tape
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 200 mm wafer
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*Pieces or
*Pieces or
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*IIIV materials (in PECVD2)
*IIIV materials (in PECVD2)
*Small amount of metal (in PECVD3)
*Small amount of metal (in PECVD3)
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*Almost any material
*not Pb and very poisonous materials
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* Silicon
* Silicon
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