Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
| Line 75: | Line 75: | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Temperature | |style="background:LightGrey; color:black"|Temperature window | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Al<sub>2</sub>O<sub>3</sub>: 150 - 300 <sup>o</sup>C | *Al<sub>2</sub>O<sub>3</sub>: 150 - 300 <sup>o</sup>C | ||
*Amorphous TiO<sub>2</sub>: 100-150 <sup>o</sup>C | *Amorphous TiO<sub>2</sub>: 100 - 150 <sup>o</sup>C | ||
*Anatase TiO<sub>2</sub>: 300-350 <sup>o</sup>C | *Anatase TiO<sub>2</sub>: 300 - 350 <sup>o</sup>C | ||
*ZnO: 100 - 250 <sup>o</sup>C | *ZnO: 100 - 250 <sup>o</sup>C | ||
*HfO<sub>2</sub>: 150- | *HfO<sub>2</sub>: 150 - 350 <sup>o</sup>C | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Precursors | |style="background:LightGrey; color:black"|Precursors | ||
| Line 91: | Line 91: | ||
*O<sub>3</sub> | *O<sub>3</sub> | ||
*O<sub>2</sub> | *O<sub>2</sub> | ||
* | *TEMAHf | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
| Line 108: | Line 108: | ||
*Al, Al<sub>2</sub>O<sub>3</sub> | *Al, Al<sub>2</sub>O<sub>3</sub> | ||
*Ti, TiO<sub>2</sub> | *Ti, TiO<sub>2</sub> | ||
*Other metals (use dedicated carrier | *Other metals (use dedicated carrier wafers) | ||
*III-V materials (use dedicated carrier | *III-V materials (use dedicated carrier wafers) | ||
*Polymers (depending on the melting point/deposition temperature, use carrier | *Polymers (depending on the melting point/deposition temperature, use carrier wafers) | ||
|- | |- | ||
|} | |} | ||