Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions
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|TableHeader= Currently valid from | |TableHeader= Currently valid from September 13 2021 onwards | ||
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|ItemName= Background knowledge required for safe operation | |||
|ItemConfiguration= The users and supervisors of Pegasus-2 must carefully read the 4 papers listed in the comments in order to have a correct understanding of the etch process and experimental procedure and how it relates to the Bosch etch performance. | |||
|ItemComment= Papers: | |||
*[[media:Black silicon on demand.pdf | On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand]] | |||
*[[media:The CORE sequence.pdf | The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF<sub>6</sub>/O<sub>2</sub> Cycles with Excellent 3D Profile Control at Room Temperature ]] | |||
*[[media:Ultrahigh aspect ratio etching and Cr mask.pdf | Ultrahigh aspect ratio etching of silicon in SF<sub>6</sub>-O<sub>2</sub> plasma: The clear-oxidize-remove etch (CORE) sequence and chromium mask]] | |||
*[[media:Cr and CrOx etching using SF6 and O2 plasma.pdf | Cr and CrO<sub>x</sub> etching using SF<sub>6</sub> and O2 plasma]] | |||
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