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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Cluster-based sputter system]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
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|Sputter deposition: can be done on top of a large range of materials. This system can only run in deposition mode in certain periods.  
|Sputter deposition: can be done on top of a large range of materials. This system can only run in deposition mode in certain periods.  
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials.
|Atomic Layer deposition provides an uniform layer with a good covering even on high aspect ratio structures.  
|Atomic Layer deposition provides an uniform layer with a good covering even on high aspect ratio structures.  
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Can be doped with boron, phosphorus or germanium
Can be doped with boron, phosphorus or germanium
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*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used
*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used)
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*
*
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*Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]])
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*SiO<sub>2</sub>
*SiO<sub>2</sub>
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!Film thickness range
!Film thickness range
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*~300nm - 4µm
*~300 nm - 4 µm
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*~40nm - 30µm
*~40 nm - 30 µm
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*~10nm - ~1µm(>2h)
*~10 nm - ~1 µm (>2h)
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* Thin layers (up to 200-300 nm)
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* Thin layers (up to 200-300 nm)
* Thin layers (up to 200-300 nm)
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!Process Temperature
!Process Temperature
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*725 <sup>o</sup>C
*725 °C
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*300 °C
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*300 <sup>o</sup>C
*Expected to be below 100 °C
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*Expected to be below 100<sup>o</sup>C
*Room temp to 400 °C
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*
*Room temp to 600 °C
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*300 <sup>o</sup>C
*300 °C
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|-


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*Less good
*Less good
*When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation.
*When doped with phosphorus and/or Boron the oxide can float at about 1000 °C in a wet oxidation.
*Deposition on one side of the substrate
*Deposition on one side of the substrate
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*Not Known
*Not Known
*Deposition on one side of the substrate
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*Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development)
*Deposition on one side of the substrate
*Deposition on one side of the substrate
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*Less dense film
*Less dense film
*Incorporation of hydrogen in the film
*Incorporation of hydrogen in the film
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*
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*
*
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*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
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*Many smaller pieces or
*up to 10x 4" or 6" wafer
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*Several small samples
*Several small samples
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* Metals  
* Metals  
* Carbon
* Carbon
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*Almost any that will not degas and is not very poisonous
*See cross-contamination sheets
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*Silicon  
*Silicon  
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