Specific Process Knowledge/Characterization/XPS/NexsaOverview: Difference between revisions

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| [[media:Denny-2012-Electronic-and-optical-properties-o.pdf | Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS]]||Publication||Y R Denny||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000301684300004 link]||X||||||X||||||||<span title="The electronic and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass substrates were investigated using X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). XPS results show that HIZO, GIZO, and IZO thin films have mixed metal and oxide phases. REELS spectra reveal that the band gaps of GIZO, HIZO, and IZO thin films are 3.1 eV, 3.5 eV, and 3.0 eV, respectively. These band gaps are consistent with optical band gaps determined by UV-Spectrometer. The optical properties represented by the dielectric function ε, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the GIZO, HIZO and IZO thin films were determined from a quantitative analysis of REELS spectra. The transmission coefficient was increased by 4% for the HIZO compound incorporating Hf into IZO, but decreased by 3% for the GIZO compound incorporating Ga into IZO in the visible region in comparison to that of IZO."> Abstract</span>
| [[media:Denny-2012-Electronic-and-optical-properties-o.pdf | Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS]]||Publication||Y R Denny||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000301684300004 link]||X||||||X||||||||<span title="The electronic and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass substrates were investigated using X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). XPS results show that HIZO, GIZO, and IZO thin films have mixed metal and oxide phases. REELS spectra reveal that the band gaps of GIZO, HIZO, and IZO thin films are 3.1 eV, 3.5 eV, and 3.0 eV, respectively. These band gaps are consistent with optical band gaps determined by UV-Spectrometer. The optical properties represented by the dielectric function ε, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the GIZO, HIZO and IZO thin films were determined from a quantitative analysis of REELS spectra. The transmission coefficient was increased by 4% for the HIZO compound incorporating Hf into IZO, but decreased by 3% for the GIZO compound incorporating Ga into IZO in the visible region in comparison to that of IZO."> Abstract</span>
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Revision as of 16:30, 8 April 2020

Publication Techniques and hardware applied Sample types/Materials Description of application/Abstract
Title Type Author Web of Science XPS UPS ISS REELS Raman Additional options/hardware
Multitechnique Surface Characterization of Organic LED Material Application note P Mack X X X Organic LED's Abstract
Advantages of coincident XPS-Raman in the analysis of mineral oxides species Application note X X TiO2, CaCO3
Spectroscopic analysis of solid oxide fuel cell material with XPS Application note P Mack X
Rapid XPS image acquisition using SnapMap Application note R Simpson X SnapMap
Composition, coverage and band gap analysis of ALD-grown ultra thin films Application note P Mack X X X Band gap Gate dielectrics, HfO2, SiO2
Confirming the layer structure of an organic FET device Application note P Mack X MAGCIS Organic FET's,
Surface analysis of zeolites: An XPS, variable kinetic energy XPS, and low energy ion scattering study Publication SR Bare link X X Zeolites, Metal oxides Abstract
Surface composition analysis by low-energy ion scattering Publication, background H H Brongersma link X Abstract
Monitoring surface metal oxide catalytic active sites with Raman spectroscopy Publication, review I E Wachs link X Metal oxides Abstract
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Publication W Cabrera link X X TEM HfO2, InGaAs, ALD Abstract
Low energy ion scattering (LEIS). A practical introduction to its theory, instrumentation, and applications Publication, review C V Cushman link X Abstract
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability Publication S McDonnell link X X AFM, ALD HfO2, MoS2 Abstract
Highly Sensitive Detection of Surface and Intercalated Impurities in Graphene by LEIS Publication S Prusa link X graphene Abstract
Reflection electron energy loss spectroscopy for ultrathin gate oxide materials Publication H C Shin link X X Valence band HfZrO4, Abstract
Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions Publication R Steinberger link X X AES, ARXPS, sputter profiles Oxygen on metal surfaces Abstract
Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO3 Powders Publication E Symianakis link X X XRD Catalysts, LaMnO3 Abstract
The Thermal Oxidation of TiAlN High Power Pulsed Magnetron Sputtering Hard Coatings as Revealed by Combined Ion and Electron Spectroscopy Publication M Wiesing link X X X Ar sputtering TiAlN Abstract
Electronic structure and energy band gap of poly(9,9-dioctylfluorene) investigated by photoelectron spectroscopy Publication L S Liao link X X Polymer Abstract
Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS Publication Y R Denny link X X Abstract
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