Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] | ![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] | ||
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|Sputter deposition: can be done on top of a large range of materials. This system can only run in deposition mode in certain periods. | |Sputter deposition: can be done on top of a large range of materials. This system can only run in deposition mode in certain periods. | ||
|Sputter deposition: can be done on top of a large range of materials | |Sputter deposition: can be done on top of a large range of materials | ||
|Atomic Layer deposition provides an uniform layer with a good covering even on high aspect ratio structures. | |Atomic Layer deposition provides an uniform layer with a good covering even on high aspect ratio structures. | ||
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* | * | ||
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*SiO<sub>2</sub> | *SiO<sub>2</sub> | ||
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*~10nm - ~1µm(>2h) | *~10nm - ~1µm(>2h) | ||
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* Thin layers (up to 200-300 nm) | * Thin layers (up to 200-300 nm) | ||
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* | * | ||
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*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
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*Less good | *Less good | ||
*When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation. | *When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation. | ||
*Deposition on one side of the substrate | *Deposition on one side of the substrate | ||
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*Less dense film | *Less dense film | ||
*Incorporation of hydrogen in the film | *Incorporation of hydrogen in the film | ||
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* | * | ||
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*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
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*Several small samples | *Several small samples | ||
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* Metals | * Metals | ||
* Carbon | * Carbon | ||
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*Silicon | *Silicon | ||