Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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90<sup>o</sup> (on this sample)<br> | 90<sup>o</sup> (on this sample)<br> | ||
If you get a small tapered profile try lowering the platen power (to e.g. 100W), this will also | If you get a small tapered profile try lowering the platen power (to e.g. 100W), this will also decrease the etch rate | ||
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|Selectivity (InP:SiO2 (PECVD 500nm) | |Selectivity (InP:SiO2 (PECVD 500nm) | ||