Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions

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==Phosphorus Pre-dep furnace (A4)==
==Phosphorus Pre-dep furnace (A4)==
[[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom 2]]
[[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1]]


The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.
The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.

Revision as of 09:23, 1 April 2019

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Phosphorus Pre-dep furnace (A4)

Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1

The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl3.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.


The user manual, technical information and contact information can be found in LabManager:

Phosphorus Pre-dep furnace (A4)

Process knowledge

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

Purpose
  • Phosphorus pre-deposition using POCL3
Process parameter range Process Temperature
  • 900-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • POCl3, N2
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned)
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