Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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The liquid precursors (H<sub>2</sub>O, TMA, TiCl<sub>4</sub> and TEMAHF) are located in the cabinet below the ALD chamber. DEZ (diethylzinc) is located in a metallic box outside in the service room. When the DEZ, TMA, TEMAHf and TiCl<sub>4</sub> precursors are not in use, the manual valves have to be closed. Ozone is generated by use of an ozone generator that is located on the side of the machine. | The liquid precursors (H<sub>2</sub>O, TMA, TiCl<sub>4</sub> and TEMAHF) are located in the cabinet below the ALD chamber. DEZ (diethylzinc) is located in a metallic box outside in the service room. When the DEZ, TMA, TEMAHf and TiCl<sub>4</sub> precursors are not in use, the manual valves have to be closed. Ozone is generated by use of an ozone generator that is located on the side of the machine. | ||
It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer. However, for some materials the uniformity will only be good for the top sample(s) in a minibatch holder. | It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer. However, for some materials the uniformity will only be good for the top sample(s) in a minibatch holder. | ||
A short presentation with some information about the ALD tool can be found [[Media:ProcessMeeting ALD 2013-12-06_1.pdf|here]]. | A short presentation with some information about the ALD tool can be found [[Media:ProcessMeeting ALD 2013-12-06_1.pdf|here]]. | ||